Methods of forming patterns using photomask including light-shielding portion having a recessed portion
A photomask layout includes: a substrate region; a lower stepped region at a region of the substrate region; and a pattern region at least partially crossing the lower stepped region and including at least one notch portion at an area overlapping the lower stepped region. A method of forming a pattern is also provided.
1. A method of forming a pattern, the method comprising:
forming a first pattern on a substrate such that a sidewall of the first pattern extends in a lengthwise direction of the first pattern;
forming a second pattern layer on the substrate, the second pattern layer covering the first pattern;
forming a photoresist layer on the second pattern layer;
partially removing the photoresist layer using a photomask to form a photoresist pattern, the photomask including a light-shielding portion that at least partially crosses the first pattern and includes a recessed portion that is recessed toward the lengthwise direction of the first pattern; and
partially removing the second pattern layer using the photoresist pattern to form a second pattern,
wherein an inclined region is defined by the sidewall of the first pattern, and the recessed portion at least partially overlaps a portion under which the inclined region is located.
2. A method of forming a pattern, the method comprising:
forming a first pattern on a substrate such that a sidewall of the first pattern extends in a lengthwise direction of the first pattern;
forming a second pattern layer on the substrate, the second pattern layer covering the first pattern;
forming a photoresist layer on the second pattern layer;
partially removing the photoresist layer using a photomask to form a photoresist pattern, the photomask including a light-shielding portion that at least partially crosses the first pattern and includes a recessed portion that is recessed toward the lengthwise direction of the first pattern; and
partially removing the second pattern layer using the photoresist pattern to form a second pattern,
wherein the recessed portion of the light-shielding portion is formed to overlap an intersection region of the light-shielding portion and the first pattern.
3. The method of claim 2 , wherein the recessed portion of the light-shielding portion is formed to overlap a vertex of the intersection region.