Manufacturing method of semiconductor device
A semiconductor device includes a semiconductor substrate, an isolation structure, and a spacer. The semiconductor substrate includes at least one fin structure. The isolation structure is partly disposed in the fin structure and partly disposed above the fin structure. The fin structure includes a first fin and a second fin elongated in the same direction. A part of the isolation structure is disposed between the first fin and the second fin in the direction where the first fin and the second fin are elongated. The spacer is disposed on sidewalls of the isolation structure on the fin structure. The isolation structure in the present invention is partly disposed in the fin structure and partly disposed above the fin structure. The negative influence of a gate structure formed on the isolation structure and sinking into the isolation structure on the isolation performance of the isolation structure may be avoided accordingly.
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate, wherein the semiconductor substrate comprises at least one fin structure;
forming a patterned mask layer on the fin structure, wherein the patterned mask layer comprises an opening corresponding to a part of the fin structure in a vertical direction;
performing an etching process with the patterned mask layer as a mask for forming a trench in the fin structure;
performing a pullback process to the patterned mask layer for enlarging the opening of the patterned mask layer; and
forming an isolation structure in the trench and the enlarged opening of the patterned mask layer.
2. The method of manufacturing the semiconductor device according to claim 1 , wherein the step of forming the isolation structure comprises:
forming an isolation material layer in the trench, in the enlarged opening of the patterned mask layer, and on the patterned mask layer, wherein the enlarged opening and the trench are filled with the isolation material layer; and
performing a planarization process to remove the isolation material layer on the patterned mask layer.
3. The method of manufacturing the semiconductor device according to claim 1 , wherein the isolation structure comprises:
a first part formed in the trench; and
a second part formed on the first part and the fin structure, wherein the second part is directly connected to the first part.
4. The method of manufacturing the semiconductor device according to claim 3 , wherein the fin structure is divided into a first fin and a second fin by the trench, the first fin and the second fin are elongated in a same direction, and the first part of the isolation structure is formed between the first fin and the second fin.
5. The method of manufacturing the semiconductor device according to claim 4 , wherein the second part of the isolation structure is formed on the first fin and the second fin.
6. The method of manufacturing the semiconductor device according to claim 3 , further comprising:
forming a spacer on sidewalls of the first part of the isolation structure on the fin structure.
7. The method of manufacturing the semiconductor device according to claim 6 , further comprising:
forming at least one gate structure straddling the fin structure, wherein the spacer is further formed on sidewalls of the gate structure.
8. The method of manufacturing the semiconductor device according to claim 7 , wherein the gate structure and the isolation structure are parallel to each other.
9. The method of manufacturing the semiconductor device according to claim 7 , further comprising:
forming a source/drain region in the fin structure between the gate structure and the isolation structure.
10. The method of manufacturing the semiconductor device according to claim 1 , wherein the pullback process comprises a wet etching process for etching the patterned mask layer and enlarging the opening of the patterned mask layer.