Lithographic patterning to form fine pitch features
Methods of lithographic patterning to form interconnect structures for a chip. A hardmask layer is formed on a dielectric layer. A sacrificial layer is formed on the hardmask layer. First opening and second openings are formed in the sacrificial layer that extend through the sacrificial layer to the hardmask layer. A resist layer is formed on the sacrificial layer. An opening is formed in the resist layer that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer. The resist layer is comprised of a metal oxide resist material that is removable selective to the hardmask layer.
1. A method of forming an interconnect level, the method comprising:
forming a hardmask layer on a dielectric layer;
forming a first sacrificial layer on the hardmask layer;
forming a first opening and a second opening in the first sacrificial layer that extend through the first sacrificial layer to the hardmask layer;
forming a first resist layer on the first sacrificial layer; and
forming a third opening that extends through the first resist layer and that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer,
wherein the first resist layer is comprised of a metal oxide resist material.
2. The method of claim 1 further comprising:
forming a second resist layer on the first resist layer; and
forming an opening that extends through the second resist layer and that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer.
3. The method of claim 2 wherein the second resist layer is comprised of the metal oxide resist material.
4. The method of claim 2 further comprising:
extending the opening in the second resist layer through the first resist layer to form a fourth opening in the first resist layer that is laterally located between the first opening in the first sacrificial layer and the second opening in the first sacrificial layer.
5. The method of claim 4 wherein extending the opening in the second resist layer through the first resist layer comprises:
removing the second resist layer,
wherein the fourth opening is formed in the first resist layer when the second resist layer is removed.
6. The method of claim 4 wherein a second sacrificial layer is located between the first resist layer and the second resist layer and includes a portion filling the third opening in the first resist layer, and further comprising:
after the fourth opening is formed in the first resist layer, removing the second resist layer,
wherein the opening in the second resist layer is extended through the first resist layer to form the fourth opening in the first resist layer when the second resist layer is removed, and the second resist layer is removable selective to the second sacrificial layer.
7. The method of claim 1 wherein forming the first opening and the second opening in the first sacrificial layer that extend to the hardmask layer comprises:
exposing the first sacrificial layer to a pattern of radiation from an exposure source projected through a photomask; and
after exposing the first sacrificial layer, developing with a chemical developer to form the first opening and the second opening in the first sacrificial layer.
8. The method of claim 7 wherein the first sacrificial layer is comprised of the metal oxide resist material.
9. The method of claim 7 wherein a second sacrificial layer is located between the first sacrificial layer and the first resist layer and has portions respectively filling the first opening in the first sacrificial layer and the second opening in the first sacrificial layer, and the second sacrificial layer is comprised of a dielectric material that is removable selective to the first resist layer and selective to the first sacrificial layer.
10. The method of claim 9 further comprising:
extending the third opening in the first resist layer through the second sacrificial layer to form a third opening in the first sacrificial layer; and
after the third opening is formed in the first sacrificial layer, removing the first resist layer.
11. The method of claim 10 further comprising
after removing the first resist layer, removing the second sacrificial layer and the portions of the second sacrificial layer from the first opening in the first sacrificial layer and the second opening in the first sacrificial layer.
12. The method of claim 11 further comprising:
concurrently extending the first opening, the second opening, and the third opening in the first sacrificial layer through the hardmask layer to form a plurality of openings in the hardmask layer.
13. The method of claim 12 further comprising:
concurrently extending the openings in the hardmask layer through the dielectric layer to form a plurality of openings in the dielectric layer; and
filling the openings in the dielectric layer with a metal to form conductive features of an interconnect structure.
14. The method of claim 1 wherein a second sacrificial layer is located between the first sacrificial layer and the first resist layer and has portions respectively filling the first opening in the first sacrificial layer and the second opening in the first sacrificial layer, and the second sacrificial layer is removable selective to the first resist layer and selective to the first sacrificial layer.
15. The method of claim 14 wherein a third sacrificial layer located between the second sacrificial layer and the first resist layer, and the third sacrificial layer is removable selective to the first resist layer and selective to the second sacrificial layer.
16. The method of claim 15 further comprising:
forming a fourth opening in the first resist layer that is laterally located between the first opening in the first sacrificial layer and the first opening in the first resist layer.
17. The method of claim 16 further comprising:
extending the fourth opening in the first resist layer through the third sacrificial layer to form a first opening in the third sacrificial layer; and
extending the first opening in the third sacrificial layer through the second sacrificial layer to form a first opening in the second sacrificial layer.
18. The method of claim 17 further comprising:
concurrently extending the third opening in the first resist layer through the third sacrificial layer to form a second opening in the third sacrificial layer and the first opening in the second sacrificial layer through the first sacrificial layer to form a third opening in the first sacrificial layer.
19. The method of claim 18 further comprising:
extending the second opening in the third sacrificial layer through the second sacrificial layer and the first sacrificial layer to form a fourth opening in the first sacrificial layer; and
removing the second sacrificial layer and the portions of the second sacrificial layer respectively filling the first opening in the first sacrificial layer and the second opening in the first sacrificial layer.
20. The method of claim 19 further comprising:
concurrently extending the first opening, the second opening, the third opening, and the fourth opening in the first sacrificial layer into the hardmask layer to form a plurality of openings in the hardmask layer;
concurrently extending the openings in the hardmask layer into the dielectric layer to form a plurality of openings in the dielectric layer; and
filling the openings in the dielectric layer with a metal to form conductive features of an interconnect structure.