Package structure and method of manufacturing the same

1. A package structure, comprising:

a die having a first connector;

an encapsulant, laterally encapsulating sidewalls of the die;

a RDL structure disposed on the die and the encapsulant, the RDL structure comprises:

a dielectric layer on top surfaces of the die and the encapsulant; and

a redistribution layer, penetrating through the dielectric layer to connect to the die; comprising:

at least one elongated via located on and connected to the first connector, wherein the at least one elongated via is embedded in the dielectric layer, and comprises a first seed layer and a first conductive layer on the first seed layer; and

at least one trace, extending on and in contact with top surfaces of the at least one elongated via and the dielectric layer, the at least one trace comprises a second seed layer and a second conductive layer on the second seed layer, wherein the second seed layer is separated from the first seed layer by the first conductive layer therebetween; and

a second connector disposed on and connected to the RDL structure,

wherein the elongated via comprises an elongated bottom surface contacting with and extending along a top surface of the first connector, the elongated bottom surface comprises a length extending along a first direction and a width extending along a second direction perpendicular to the first direction,

wherein the length of the elongated bottom surface is larger than the width of the elongated bottom surface.

2. The package structure of claim 1 , wherein the at least one elongated via comprises a first elongated via and a second elongated via arranged in parallel.

3. The package structure of claim 2 , wherein the at least one trace comprises a first trace and a second trace arranged in parallel and connected to the first elongated via and the second elongated via respectively.

4. The package structure of claim 1 , wherein the at least one elongated via comprises a first elongated via and a second elongated via landed on a same first connector of the die.

5. The package structure of claim 1 , wherein the elongated via comprises a sidewall, and a base angle of the elongated via defined by the sidewall and the elongated bottom surface is equal to or less than 90°.

6. The package structure of claim 1 , wherein the top surface of the at least one elongated via is opposite to the elongated bottom surface, and wherein the elongated bottom surface has an area larger than an area of the top surface.

7. The package structure of claim 6 , wherein a shape of the elongated via is configured as a truncated cone.

8. The package structure of claim 6 , wherein the first seed layer has an extension protruding from a sidewall of the first conductive layer.

9. A package structure, comprising:

a die having a first connector;

an encapsulant, laterally encapsulating sidewalls of the die;

a RDL structure disposed over the die and the encapsulant, wherein the RDL structure comprises:

a dielectric layer on top surfaces of the die and the encapsulant; and

a via embedded in the dielectric layer and located on the first connector, wherein an area of a bottom surface of the via is larger than an area of a top surface of the via, and the bottom surface is in contact with and electrically connected to the first connector, wherein the via comprises a first seed layer and a first conductive layer on the first seed layer, and a portion of a top surface of the first seed layer is in contact with the dielectric layer; and

a second connector disposed on and connected to the RDL structure.

10. The package structure of claim 9 , wherein the via is tapered toward the second connector.

11. The package structure of claim 9 , wherein the RDL structure further comprises a trace extending on the top surface of the via and a top surface of the dielectric layer, the trace comprises a second seed layer and a second conductive layer on the second seed layer, wherein the second conductive layer is separated from the first conductive layer by the second seed layer therebetween.

12. The package structure of claim 9 , wherein the first seed layer has the bottom surface and the first conductive layer has the top surface.

13. The package structure of claim 9 , wherein the first seed layer has an extension protruding from a sidewall of the first conductive layer, and the portion of the top surface of the first seed layer is a top surface of the extension.

14. The package structure of claim 9 , wherein a top surface of the first seed layer and a top surface of the first conductive layer have substantially identical shapes.

15. The package structure of claim 9 , wherein a top surface of the first seed layer and a top surface of the first conductive layer have different shapes.

16. A method of manufacturing a package structure, comprising:

forming an encapsulant aside a die having a first connector, so as to laterally encapsulating sidewalls of the die;

forming a RDL structure on the die and the encapsulant, wherein RDL structure comprises a dielectric layer on top surfaces of the die and the encapsulant; and a redistribution layer penetrating through the dielectric layer to connect to the die, the forming the RDL structure comprising:

forming at least one elongated via located on and connected to the first connector, wherein the at least one elongated via comprises a first seed layer and a first conductive layer on the first seed layer;

forming the dielectric layer, such that the at least one elongated via is embedded in the dielectric layer; and

forming at least one trace extending on and in contact with top surfaces of the at least one elongated via and the dielectric layer, the at least one trace comprises a second seed layer and a second conductive layer on the second seed layer, wherein the second seed layer is separated from the first seed layer by the first conductive layer therebetween; and

forming a second connector over and connected to the RDL structure,

wherein the elongated via comprises an elongated bottom surface contacting and extending along a top surface of the first connector, the elongated bottom surface comprises a length extending along a first direction and a width extending along a second direction perpendicular to the first direction,

wherein the length of the elongated bottom surface is larger than the width of the elongated bottom surface.

17. The method of claim 16 , further comprises performing a treatment process on the first conductive layer before forming the dielectric layer, such that the top surface of the at least one elongated via is smaller than the elongated bottom surface of the at least one elongated via, wherein the treatment process comprises an anisotropic etch process.

18. The method of claim 17 , wherein the anisotropic process comprises a wet etch process.

19. The method of claim 17 , wherein the treatment process is performed so that the at least one elongated via is tapered away from the first connector.

20. The method of claim 16 , wherein forming the at least one elongated via comprises:

forming a first seed material layer on the die and the encapsulant;

forming a patterned mask layer on the first seed material layer;

forming the first conductive layer on the first seed material layer exposed by the patterned mask layer;

removing the patterned mask layer; and

removing a portion of the first seed material layer not coved by the first conductive layer, so as to form the first seed layer, and the first seed layer and the first conductive layer constitute the at least one elongated via.