Manufacturing method of semiconductor package including laser processing
A manufacturing method of a semiconductor package includes locating a plurality of semiconductor packages on a substrate, forming a resin insulating layer covering the plurality of semiconductor devices, forming grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the substrate, and irradiating the substrate with laser light in positional correspondence with the grooves to separate the plurality of semiconductor devices from each other.
1. A manufacturing method of a semiconductor package, comprising:
locating an adhesive material on a metal substrate;
locating a plurality of semiconductor devices on the adhesive material;
forming a resin insulating layer covering the plurality of semiconductor devices;
forming first grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the metal substrate;
after forming the first grooves, forming recessed portions in the metal substrate below the first grooves; and
forming second grooves by irradiating the metal substrate with a laser light in positional correspondence with the first grooves and melting the metal substrate where the laser light is irradiated to separate the plurality of semiconductor devices from each other.
2. The manufacturing method of a semiconductor package according to claim 1 , wherein a size of the first groove is different from a size of the second groove in a planar view, the recessed portions comprise stepped portions between the first grooves and the second grooves, and the stepped portions are smoothed.
3. The manufacturing method of a semiconductor package according to claim 2 , wherein each of the stepped portions comprises a consecutive curve shape.
4. The manufacturing method of a semiconductor package according to claim 1 , wherein a surface of the metal substrate opposite to a surface on which the resin insulating layer is formed is irradiated with the laser light.
5. The manufacturing method of a semiconductor package according to claim 4 , wherein regions each having a width smaller than that of each of the first grooves is irradiated with the laser light.
6. The manufacturing method of a semiconductor package according to claim 5 , wherein the first grooves are formed by a dicing blade.
7. The manufacturing method of a semiconductor package according to claim 1 , wherein regions each having a width smaller than that of each of the first grooves is irradiated with the laser light.
8. The manufacturing method of a semiconductor package according to claim 7 , wherein the first grooves are formed by a dicing blade.
9. The manufacturing method of a semiconductor package according to claim 1 , wherein the first grooves are formed by a dicing blade.
10. The manufacturing method of a semiconductor package according to claim 1 , wherein a side surface of the metal substrate is smoothed.
11. A manufacturing method of a semiconductor package, comprising:
locating an adhesive material on a metal substrate;
locating a plurality of semiconductor devices on the adhesive material;
forming a resin insulating layer covering the plurality of semiconductor devices;
forming first grooves, in the resin insulating layer, enclosing each of the plurality of semiconductor devices and reaching the metal substrate; and
forming second grooves by irradiating the metal substrate with a laser light in positional correspondence with the first grooves and melting the metal substrate where the laser light is irradiated to separate the plurality of semiconductor devices from each other, wherein:
a size of the first groove is different from a size of the second groove in a planar view, and
a stepped portion between the first groove and the second groove is smoothed.
12. The manufacturing method of a semiconductor package according to claim 11 , wherein the stepped portion is a consecutive curve shape.