Method for fabricating cap layer on an epitaxial layer
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.
1. A method for fabricating semiconductor device, comprising:
providing a substrate;
forming a gate structure on the substrate;
forming a recess in the substrate adjacent to two sides of the gate structure;
forming an epitaxial layer in the recess, wherein a top surface of the epitaxial layer is lower than a top surface of the substrate;
forming a cap layer on the epitaxial layer, wherein a top surface of the cap layer is higher than a top surface of the substrate, the top surface and a bottom surface of the cap layer comprise a first V-shape, and the cap layer and the epitaxial layer comprise same material; and
forming a silicide on the cap layer, wherein the silicide comprises a second V-shape, wherein a width of the second V-shape of the silicide is less than a width of the first V-shape of the cap layer.
2. The method of claim 1 , further comprising forming a buffer layer in the recess before forming the epitaxial layer.
3. The method of claim 2 , wherein the buffer layer comprises silicon phosphide (SiP).
4. The method of claim 1 , wherein the epitaxial layer and the cap layer comprises SiP.
5. The method of claim 4 , wherein a concentration of the phosphorus in the cap layer is lower than a concentration of the phosphorus in the epitaxial layer.
6. The method of claim 1 , wherein a top surface of the epitaxial layer comprises a V-shaped profile.
7. The method of claim 1 , wherein the cap layer comprises a triangular shape.
8. The method of claim 7 , further comprising:
forming a contact plug to contact the cap layer and transforming the triangular shape of the cap layer into the first V-shape.
9. The method of claim 8 , wherein a width of the contact plug is less than a width of the first V-shape of the cap layer and equal to a width of the second V-shape of the silicide.
10. The method of claim 8 , wherein a width of the contact plug is less than a width of the first V-shape of the cap layer and less than a width of the second V-shape of the silicide.
11. The method of claim 1 , wherein a thickness of the cap layer is between 10-100 Angstroms.
12. The method of claim 1 , wherein a topmost surface of the first V-shape of the cap layer is higher than a top surface of the substrate.
13. The method of claim 1 , wherein a topmost surface of the second V-shape of the silicide is higher than a top surface of the substrate.