Device and method for bonding of substrates
A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H ; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T H is reduced at the second sample holder surface during the bonding.
1. A device for bonding a first substrate with a second substrate, comprising:
a measuring means configured to:
detect a percentage amount of a bonded surface of the first and second substrates with respect to a non-bonded surface of the first and second substrates during contact of the first and second substrates; and
monitor an advance of a bonding wave between the first and second substrates via the detected percentage amount to enable control of the bonding wave.
2. The device according to claim 1 , further comprising:
a first substrate holder configured to hold the first substrate with a first holding force F H1 ; and
a second substrate holder configured to hold the second substrate with a second holding force F H2 ,
wherein at least one of the first and second holding forces F H1 and F H2 is reduced to 0 to control the bonding wave.
3. The device according to claim 2 , wherein the first and second substrate holders respectively fix the first and second substrates thereto by vacuums respectively applied from the first and second substrate holders,
wherein the vacuums respectively applied from the first and second substrate holders impose the first and second holding forces F H1 and F H2 to respectively fix the first and second substrates to the first and second substrate holders, and
wherein the vacuums are reduced to reduce the first and second holding forces F H1 and F H2 and respectively control releasing of the first and second substrates from the first and second substrate holders.
4. The device according to claim 1 , wherein the measuring means is further configured to detect a state of the bonding wave.
5. The device according to claim 1 , wherein the measuring means comprises conductivity measurement means configured to detect the percentage amount and monitor the advance.
6. The device according to claim 1 , wherein the measuring means further comprises at least one of optics and cameras configured to detect at least one of a position of the bonding wave and a size of a bonded area between the first and second substrates to monitor the advance of the bonding wave.
7. The device according to claim 6 , wherein the advance of the bonding wave is monitored over a period that is greater than 1 second.
8. The device according to claim 6 , wherein the advance of the bonding wave is monitored via a radial position of the bonding wave corresponding to at least 0.1 times respective diameters of the first and second substrates.
9. The device according to claim 1 , wherein the bonding wave is controlled in view of a defined set of values obtained by the measuring means.
10. The device according to claim 1 , wherein the bonding wave is controlled by targeted removal of a fixing means by continuous removal of a vacuum.
11. The device according to claim 1 , wherein the measuring means is further configured to monitor the advance until the percentage amount is greater than 1%.
12. The device according to claim 1 , wherein the measuring means is further configured to monitor the advance until the percentage amount is greater than 4%.
13. The device according to claim 1 , wherein the measuring means is further configured to monitor the advance until the percentage amount is greater than 9%.
14. The device according to claim 1 , wherein the measuring means is further configured to monitor the advance until the percentage amount is greater than 16%.
15. The device according to claim 1 , wherein the measuring means is further configured to monitor the advance until the percentage amount is greater than 25%.
16. A device for bonding a first substrate with a second substrate at respective contact faces of the substrates, the device comprising:
a first sample holder configured to hold the first substrate to a surface of the first sample holder with a holding force F H1 applied by a first vacuum of the first sample holder;
a second sample holder configured to hold the second substrate to a surface of the second sample holder with a holding force F H2 applied by a second vacuum of the second sample holder; and
a measuring means configured to:
detect a percentage amount of a bonded surface of the first and second substrates with respect to a non-bonded surface of the first and second substrates during contact of the first and second substrates; and
monitor an advance of a bonding wave between the first and second substrates via the detected percentage amount to enable control of the bonding wave.
17. A method for bonding a first substrate with a second substrate, comprising:
initiating contact between the first substrate and the second substrate;
detecting a percentage amount of a bonded surface of the contacted first and second substrates with respect to a non-bonded surface of the contacted first and second substrates;
monitoring an advance of a bonding wave between the contacted first and second substrates via the detected percentage amount to enable control of the bonding wave; and
reducing first and second vacuums respectively included in first and second sample holders to respectively reduce a hold of the contacted first and second substrates by the first and second sample holder and control the bonding wave therebetween.