Display device
A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.
1. An electronic appliance comprising:
a first device comprising:
a first battery; and
operation buttons; and
a second device comprising:
a second battery; and
a display device comprising:
a pixel portion comprising a first transistor; and
a driver portion comprising second and third transistors,
wherein the first device and the second device are attachable to and detachable from each other,
wherein the first transistor comprises:
a first gate electrode; and
a first oxide semiconductor layer overlapping with the first gate electrode,
wherein the second transistor comprises:
a second gate electrode;
a gate insulating layer over the second gate electrode; and
a second oxide semiconductor layer over the gate insulating layer and overlapping with the second gate electrode,
wherein the third transistor comprises:
a third gate electrode;
the gate insulating layer over the third gate electrode; and
a third oxide semiconductor layer over the gate insulating layer and overlapping with the third gate electrode,
wherein the second oxide semiconductor layer and the third oxide semiconductor layer are electrically connected to each other via a first conductive layer,
wherein the third gate electrode and the third oxide semiconductor layer are electrically connected to each other via a second conductive layer,
wherein the third gate electrode includes first and second regions and a third region between the first and second regions in a channel length direction of the third transistor,
wherein the third oxide semiconductor layer overlaps the third region of the third gate electrode,
wherein the third oxide semiconductor layer does not overlap the first and second regions of the third transistor,
wherein the second conductive layer is directly connected to the first region, and
wherein a length of the first region is larger than a length of the second region in the channel length direction of the third transistor.
2. The electronic appliance according to claim 1 , wherein the first transistor comprises a first channel protective layer in contact with the first oxide semiconductor layer.
3. The electronic appliance according to claim 1 , wherein the first device is capable of transmitting input information to the second device by wireless communication.
4. The electronic appliance according to claim 1 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium, gallium, and zinc.
5. The electronic appliance according to claim 1 ,
wherein the second transistor further comprises a second channel protective layer over and in contact with the second oxide semiconductor layer, and
wherein the third transistor further comprises a third channel protective layer over and in contact with the third oxide semiconductor layer.
6. The electronic appliance according to claim 1 , wherein the first transistor further comprises a first n + type layer and a second n + type layer each over and in contact with the first oxide semiconductor layer.
7. The electronic appliance according to claim 1 , wherein the second transistor further comprises a third n + type layer and a fourth n + type layer each over and in contact with the second oxide semiconductor layer.
8. The electronic appliance according to claim 1 , wherein the third transistor further comprises a fifth n + type layer and a sixth n + type layer each over and in contact with the third oxide semiconductor layer.
9. The electronic appliance according to claim 1 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer has an amorphous structure.
10. The electronic appliance according to claim 1 , wherein the first device has a phone function and the second device has a display function.
11. The electronic appliance according to claim 1 , wherein the electronic appliance is a cellular phone.
12. An electronic appliance comprising:
a first device comprising:
a first battery; and
operation buttons; and
a second device comprising:
a second battery; and
a display device comprising:
a pixel portion comprising a first transistor; and
a driver portion comprising second and third transistors,
wherein the first device and the second device are attachable to and detachable from each other,
wherein the first transistor comprises:
a first gate electrode; and
a first oxide semiconductor layer overlapping with the first gate electrode,
wherein the second transistor comprises:
a second gate electrode;
a gate insulating layer over the second gate electrode; and
a second oxide semiconductor layer over the gate insulating layer and overlapping with the second gate electrode,
wherein the third transistor comprises:
a third gate electrode;
the gate insulating layer over the third gate electrode; and
a third oxide semiconductor layer over the gate insulating layer and overlapping with the third gate electrode,
wherein the second oxide semiconductor layer and the third oxide semiconductor layer are electrically connected to each other via a first conductive layer,
wherein the third gate electrode and the third oxide semiconductor layer are electrically connected to each other via a second conductive layer,
wherein a wiring is directly connected to the first conductive layer,
wherein the third gate electrode includes first and second regions and a third region between the first and second regions in a channel length direction of the third transistor,
wherein the third oxide semiconductor layer overlaps the third region of the third gate electrode,
wherein the third oxide semiconductor layer does not overlap the first and second regions of the third transistor,
wherein the second conductive layer is directly connected to the first region, and
wherein a length of the first region is larger than a length of the second region in the channel length direction of the third transistor.
13. The electronic appliance according to claim 12 , wherein the first transistor comprises a first channel protective layer in contact with the first oxide semiconductor layer.
14. The electronic appliance according to claim 12 , wherein the first device is capable of transmitting input information to the second device by wireless communication.
15. The electronic appliance according to claim 12 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium, gallium, and zinc.
16. The electronic appliance according to claim 12 ,
wherein the second transistor further comprises a second channel protective layer over and in contact with the second oxide semiconductor layer, and
wherein the third transistor further comprises a third channel protective layer over and in contact with the third oxide semiconductor layer.
17. The electronic appliance according to claim 12 , wherein the first transistor further comprises a first n + type layer and a second n + type layer each over and in contact with the first oxide semiconductor layer.
18. The electronic appliance according to claim 12 , wherein the second transistor further comprises a third n + type layer and a fourth n + type layer each over and in contact with the second oxide semiconductor layer.
19. The electronic appliance according to claim 12 , wherein the third transistor further comprises a fifth n + type layer and a sixth n + type layer each over and in contact with the third oxide semiconductor layer.
20. The electronic appliance according to claim 12 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer has an amorphous structure.
21. The electronic appliance according to claim 12 , wherein the first device has a phone function and the second device has a display function.
22. The electronic appliance according to claim 12 , wherein the electronic appliance is a cellular phone.
23. An electronic appliance comprising:
a first device comprising:
a first battery; and
operation buttons; and
a second device comprising:
a second battery; and
a display device comprising:
a pixel portion comprising a first transistor; and
a driver portion comprising second and third transistors,
wherein the first device and the second device are attachable to and detachable from each other,
wherein the first transistor comprises:
a first gate electrode;
a first oxide semiconductor layer overlapping with the first gate electrode,
wherein the second transistor comprises:
a second gate electrode;
a gate insulating layer over the second gate electrode; and
a second oxide semiconductor layer over the gate insulating layer and overlapping with the second gate electrode,
wherein the third transistor comprises:
a third gate electrode;
the gate insulating layer over the third gate electrode; and
a third oxide semiconductor layer over the gate insulating layer and overlapping with the third gate electrode,
wherein the third gate electrode and the third oxide semiconductor layer are electrically connected to each other via a first conductive layer,
wherein the third gate electrode includes first and second regions and a third region between the first and second regions in a channel length direction of the third transistor,
wherein the third oxide semiconductor layer overlaps the third region of the third gate electrode,
wherein the third oxide semiconductor layer does not overlap the first and second regions of the third transistor,
wherein the first conductive layer is directly connected to the first region, and
wherein a length of the first region is larger than a length of the second region in the channel length direction of the third transistor.