Semiconductor integrated circuit device
A semiconductor chip including an internal circuit, a plurality of electrode pads and a plurality of I/O cells. The plurality of electrode pads are arranged on a first line, a second line and a third line. Each of the plurality of electrode pads arranged at least on the first and second lines overlaps corresponding one of the plurality of I/O cells in a plan view. The plurality of I/O cells are provided on a peripheral region of the semiconductor chip. Each of the plurality of I/O cells includes a protective circuit, and is connected to corresponding one of the plurality of electrode pads. The protective circuit includes a power source-side protective circuit provided between the corresponding one of the plurality of electrode pads and a power source wiring; and a ground-side protective circuit provided between the corresponding one of the plurality of electrode pads and a ground wiring.
1. A semiconductor integrated circuit device, comprising:
a semiconductor chip including an internal circuit and a plurality of I/O cells, wherein:
the plurality of I/O cells are provided on a periphery area of the semiconductor chip,
each of the plurality of I/O cells includes a first region to which first voltage is supplied and a second region to which second voltage is supplied, wherein the second voltage is lower than the first voltage, the first region including a protective circuit for protecting the internal circuit from discharge of static electricity,
the first region is disposed closer to an outermost edge of the semiconductor chip than the second region,
each of the plurality of I/O cells includes a level shift circuit operated with the first and second voltage,
each of the plurality of I/O cells has a corresponding electrode pad overlapping the I/O cell in plan view and connected to the corresponding protective circuit,
electrode pads of the plurality of I/O cells are arranged in a first row and a second row, the first row being disposed closer to the outermost edge of the semiconductor chip than the second row, and
the protective circuit of each of the plurality of I/O cells includes:
a power source-side protective circuit provided between the corresponding electrode pad and a power source wiring; and
a ground-side protective circuit provided between the corresponding electrode pad and a ground wiring.
2. The semiconductor integrated circuit device of claim 1 , wherein:
the protective circuit is disposed closer to the outermost edge of the semiconductor chip than the level shift circuit.
3. The semiconductor integrated circuit device of claim 1 , wherein
the first region further includes a plurality of guard ring diffusion layers.
4. The semiconductor integrated circuit device of claim 1 , wherein
the ground-side protective circuit includes an N-type diffusion layer region and the power source-side protective circuit includes a P-type diffusion layer region.
5. The semiconductor integrated circuit device of claim 1 , wherein
the first region further includes an I/O buffer circuit disposed closer to the outermost edge of the semiconductor chip than the level shift circuit.
6. A semiconductor integrated circuit device, comprising:
a semiconductor chip including an internal circuit and a plurality of I/O cells, wherein:
the plurality of I/O cells are provided on a periphery area of the semiconductor chip,
each of the plurality of I/O cells includes a first region to which first voltage is supplied and a second region to which second voltage is supplied, wherein the second voltage is lower than the first voltage, the first region including a protective circuit for protecting the internal circuit from discharge of static electricity,
the first region is disposed closer to an outermost edge of the semiconductor chip than the second region,
each of the plurality of I/O cells includes a level shift circuit operated with the first and second voltage,
each of the plurality of I/O cells has a corresponding electrode pad overlapping the I/O cell in plan view and connected to the corresponding protective circuit, and
the protective circuit of each of the plurality of I/O cells includes:
a power source-side protective circuit provided between the corresponding electrode pad and a power source wiring; and
a ground-side protective circuit provided between the corresponding electrode pad and a ground wiring.
7. The semiconductor integrated circuit device of claim 6 , wherein:
the protective circuit is disposed closer to the outermost edge of the semiconductor chip than the level shift circuit.
8. The semiconductor integrated circuit device of claim 6 , wherein
the first region further includes a plurality of guard ring diffusion layers.
9. The semiconductor integrated circuit device of claim 6 , wherein
the ground-side protective circuit includes an N-type diffusion layer region and the power source-side protective circuit includes a P-type diffusion layer region.
10. The semiconductor integrated circuit device of claim 6 , wherein
the first region further includes an I/O buffer circuit disposed closer to the outermost edge of the semiconductor chip than the level shift circuit.