FinFET with high-k spacer and self-aligned contact capping layer
In the manufacture of a FinFET device, an isolation architecture is provided between gate and source/drain contact locations. The isolation architecture may include a low-k spacer layer and a contact etch stop layer. The isolation architecture further includes a high-k, etch-selective layer that is adapted to resist degradation during an etch to open the source/drain contact locations. The high-k layer, in conjunction with a self-aligned contact (SAC) capping layer disposed over the gate, forms an improved isolation structure that inhibits short circuits or parasitic capacitance between the gate and source/drain contacts.
1. A FinFET device, comprising:
a semiconductor fin having a source/drain region and a channel region adjacent to the source/drain region;
a conductive contact disposed over the source/drain region;
a gate stack disposed over the channel region, wherein the gate stack comprises a high-k layer and a gate conductor layer overlying the high-k layer;
a spacer layer between the conductive contact and the gate stack; and
a capping layer disposed over the gate stack, wherein the high-k layer includes an upper portion disposed directly between the capping layer and the conductive contact, a lower portion extending along a sidewall of the spacer layer and disposed between the gate conductor layer and the spacer layer, and a middle portion extending along an upper surface of the spacer layer and disposed directly between the capping layer and the spacer layer.
2. The FinFET device of claim 1 , wherein the capping layer has a lower portion having a first width disposed directly over the gate stack and an upper portion having a second width greater than the first width disposed over the lower portion.
3. The FinFET device of claim 2 , wherein said portion of the high-k layer extends along a sidewall surface of the upper portion of the capping layer and is disposed directly between the upper portion of the capping layer and the conductive contact.
4. The FinFET device of claim 1 , wherein a sidewall of the capping layer overlaps at least a portion of a sidewall of the spacer layer.
5. The FinFET device of claim 1 , wherein a bottom surface of the capping layer is below a top surface of the spacer layer.
6. The FinFET device of claim 1 , wherein the capping layer comprises silicon nitride and the spacer layer comprises a low-k dielectric.
7. The FinFET device of claim 1 , wherein a top surface of the gate conductor layer is below a top surface of the spacer layer.
8. The FinFET device of claim 1 , wherein a portion of the high-k layer is disposed directly over the channel region of the fin.
9. The FinFET device of claim 1 , wherein a top surface of the conductive contact is co-planar with a top surface of the capping layer.
10. The FinFET device of claim 9 , further comprising:
an interlayer dielectric disposed on the top surface of the capping layer.
11. The FinFET device of claim 9 , further comprising:
a source/drain contact disposed on the top surface of the conductive contact.
12. A FinFET device, comprising:
a semiconductor fin having a source/drain region and a channel region adjacent to the source/drain region;
a conductive contact disposed over the source/drain region;
a gate stack disposed over the channel region;
a capping layer disposed over the gate stack;
a spacer layer between the conductive contact and the gate stack;
a low-k spacer layer between the conductive contact and the gate stack; and
a high-k layer disposed over an isolation layer, wherein the high-k layer includes an upper portion disposed directly between the capping layer and the conductive contact, a lower portion extending along a sidewall of the spacer layer and disposed between the gate conductor layer and the spacer layer, and a middle portion extending along an upper surface of the spacer layer and disposed directly between the capping layer and the spacer layer.
13. The FinFET device of claim 12 , wherein the capping layer has a lower portion having a first width disposed directly over the gate stack and an upper portion having a second width greater than the first width disposed over the lower portion.
14. The FinFET device of claim 12 , wherein a portion of the high-k layer is disposed directly over the channel region of the fin.