Nitrogen-containing ligands and their use in atomic layer deposition methods
Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
1. An apparatus comprising:
a deposition chamber; and
a metal coordination complex which has a formula
wherein L is one or more neutral, anionic or mixed ligands, and M is a transition metal ion or a boron group ion.
2. The apparatus of claim 1 , wherein L is not hydrogen.
3. The apparatus of claim 1 , wherein L is one or more of halogen, alkyl, amino and methylamino.
4. The apparatus of claim 1 , wherein L is an NNN ligand.
5. The apparatus of claim 1 , wherein the transition metal ion or the boron group ion is selected from the group consisting of aluminum, titanium, tungsten, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, palladium, platinum, rhodium, iridium, silver, gold, hafnium, manganese, ruthenium and copper.
6. The apparatus of claim 1 , wherein the metal coordination complex is in the vapor phase.
7. The apparatus of claim 1 , wherein L is not an NNN ligand.