Treatment for adhesion improvement
A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.
1. A method comprising:
forming an opening in an insulating layer of a structure;
depositing an adhesion layer in the opening;
incorporating nitrogen atoms into the adhesion layer; and
depositing metal into the opening, the metal forming a metal plug and an interlayer interposed between a metal plug and the adhesion layer, the interlayer comprising a compound of the metal and nitrogen, wherein the metal comprises cobalt.
2. The method of claim 1 , wherein the adhesion layer comprises non-crystalline titanium nitride.
3. The method of claim 1 , wherein incorporating nitrogen atoms into the adhesion layer comprises applying a nitrogen/hydrogen plasma treatment to the adhesion layer.
4. The method of claim 3 , further comprising:
prior to depositing the metal, soaking the structure in silane, wherein the compound includes silicon.
5. The method of claim 1 , further comprising:
prior to depositing the adhesion layer, depositing a metal layer in the opening; and
forming a silicide.
6. The method of claim 5 , wherein the adhesion layer is a nitride of the metal of the metal layer.
7. The method of claim 1 , wherein the metal nitride interlayer comprises a first crystalline structure, wherein the metal plug comprises a second crystalline structure, and wherein the first crystalline structure and second crystalline structure have a lattice mismatch less than 2%.
8. A method comprising:
forming an opening in an insulating layer, the opening having sidewalls and a bottom;
treating the sidewalls and the bottom of the opening with a nitrogen-based plasma process, the nitrogen-based plasma process incorporating free nitrogen atoms into the sidewalls and the bottom of the opening; and
forming a metal plug in the opening, the metal plug comprising a metal, the metal combining with the free nitrogen atoms to form an interlayer between the metal plug and the sidewalls and the bottom of the opening.
9. The method of claim 8 , wherein the insulating layer comprises silicon oxide or silicon nitride.
10. The method of claim 8 , wherein the metal of the metal plug comprises cobalt.
11. The method of claim 8 , wherein the treating includes applying a nitrogen/hydrogen plasma to the sidewalls and bottom of the opening.
12. The method of claim 8 , further comprising:
prior to treating the opening, forming an adhesion layer in the opening, the adhesion layer comprising a metal nitride.
13. The method of claim 8 , wherein the interlayer comprises a first crystalline structure, wherein the metal plug comprises a second crystalline structure similar to the first crystalline structure, the first and second crystalline structures having different lattice constants.
14. The method of claim 8 , further comprising:
prior to forming the metal plug, soaking the opening in silane.
15. A method comprising:
forming an opening in an insulating layer of a semiconductor device, the opening exposing a contact of the semiconductor device;
depositing unbonded nitrogen into sidewalls of the opening; and
depositing a metal feature in the opening directly on the sidewalls of the opening, the metal feature interacting with the unbonded nitrogen to form an adhesive interlayer between the metal feature and the sidewalls of the opening, the adhesive interlayer comprising a compound of a metal material of the metal feature and nitrogen.
16. The method of claim 15 , wherein the insulating layer comprises silicon oxide or silicon nitride.
17. The method of claim 15 , wherein the metal material of the metal feature comprises cobalt.
18. The method of claim 15 , wherein depositing unbonded nitrogen comprises applying a nitrogen/hydrogen plasma to the sidewalls of the opening.
19. The method of claim 15 , further comprising:
prior to treating the opening, forming an adhesion layer in the opening, the adhesion layer comprising a metal nitride, the sidewalls of the opening corresponding to sidewalls of the adhesion layer.
20. The method of claim 15 , wherein the interlayer comprises a first crystalline structure, wherein the metal plug comprises a second crystalline structure similar to the first crystalline structure, the first and second crystalline structures having different lattice constants.