Substrate processing apparatus and substrate processing method
In a substrate processing apparatus, an outer edge portion of a substrate in a horizontal state is supported from below by an annular substrate supporting part, and a lower surface facing part having a facing surface facing a lower surface of the substrate is provided inside the substrate supporting part. A gas ejection nozzle for ejecting heated gas toward the lower surface is provided in the lower surface facing part, and the substrate is heated by the heated gas when an upper surface of the rotating substrate is processed with a processing liquid ejected from an upper nozzle. Further, a lower nozzle is provided in the lower surface facing part, to thereby perform a processing on the lower surface with a processing liquid. Since the gas ejection nozzle protrudes from the facing surface, a flow of the processing liquid into the gas ejection nozzle can be suppressed during the processing.
1. A substrate processing apparatus for processing a substrate, comprising:
an annular supporting part having an annular supporting part base around a central axis directed in a vertical direction, for supporting an outer edge portion of a substrate in a horizontal state from below;
a lower surface facing part having a facing surface which faces an entire lower surface of said substrate in said vertical direction inside said supporting part base;
a rotating mechanism including a motor for rotating said annular supporting part together with said substrate around said central axis relatively to said lower surface facing part;
a first processing liquid supply part connected to a nozzle for supplying a first processing liquid onto an upper surface of said substrate;
a second processing liquid supply part connected to a processing liquid nozzle provided at said lower surface facing part, for supplying a second processing liquid onto a center portion of said lower surface of said substrate from said processing liquid nozzle; and
at least one gas ejection nozzle positioned away from said central axis in said lower surface facing part, and protruding from said facing surface, for ejecting heated gas toward said lower surface of said substrate, wherein
said facing surface is a sloped surface which gets farther away from said substrate as a distance from said central axis becomes larger, and
said at least one gas ejection nozzle includes a gas ejection nozzle which is inclined with respect to said central axis so as to eject said heated gas toward an opposite side of said central axis.
2. The substrate processing apparatus according to claim 1 , wherein
a distance between said at least one gas ejection nozzle and said lower surface of said substrate is not larger than 8 mm in a direction of said central axis.
3. The substrate processing apparatus according to claim 2 , wherein
said at least one gas ejection nozzle includes a plurality of gas ejection nozzles, and
a distance between an ejection port of one gas ejection nozzle out of said plurality of gas ejection nozzles and said central axis is different from that between an ejection port of another gas ejection nozzle and said central axis.
4. The substrate processing apparatus according to claim 1 , wherein
said at least one gas ejection nozzle includes a plurality of gas ejection nozzles, and
a distance between an ejection port of one gas ejection nozzle out of said plurality of gas ejection nozzles and said central axis is different from that between an ejection port of another gas ejection nozzle and said central axis.
5. The substrate processing apparatus according to claim 1 , further comprising:
a sealed space forming part including a chamber and forming an internal space which is sealed, in which a processing on said substrate with said first processing liquid and said second processing liquid is performed.
6. The substrate processing apparatus according to claim 5 , wherein
said at least one gas ejection nozzle includes a plurality of gas ejection nozzles, and
a distance between an ejection port of one gas ejection nozzle out of said plurality of gas ejection nozzles and said central axis is different from that between an ejection port of another gas ejection nozzle and said central axis.
7. The substrate processing apparatus according to claim 1 , wherein
a position of said lower surface facing part is fixed, and
said rotating mechanism rotates said annular supporting part around said central axis.
8. The substrate processing apparatus according to claim 7 , wherein
said at least one gas ejection nozzle includes a plurality of gas ejection nozzles, and
a distance between an ejection port of one gas ejection nozzle out of said plurality of gas ejection nozzles and said central axis is different from that between an ejection port of another gas ejection nozzle and said central axis.