Radio-frequency isolation using porous silicon
A method for fabricating a radio-frequency device involves providing a substrate structure including a silicon handle wafer, an oxide layer formed on the silicon handle wafer, and an active silicon layer disposed on the oxide layer. The method further involves patterning and etching the active silicon layer and the oxide layer to form a frontside opening in the active silicon layer and the oxide layer exposing a top surface of the silicon handle wafer and converting the exposed top surface of the silicon handle wafer to porous silicon
1. A radio-frequency device comprising:
an oxide layer;
an active semiconductor layer implemented over the oxide layer;
a substrate layer, the oxide layer being formed on a top surface of the substrate layer, the substrate layer including a silicon portion and a backside porous silicon portion that is at least partially exposed on a backside of the radio-frequency device;
a field-effect transistor implemented in the active semiconductor layer; and
a trap-rich layer between the oxide layer and the substrate layer.
2. The radio-frequency device of claim 1 wherein the porous silicon portion does not laterally overlap with the field-effect transistor.
3. The radio-frequency device of claim 1 wherein the porous silicon portion has a thickness that is less than a thickness of the substrate layer.
4. A wafer device comprising:
a semiconductor wafer;
an oxide layer formed over the semiconductor wafer;
an active semiconductor layer implemented over the oxide layer; a field-effect transistor implemented in the active semiconductor layer; and
a silicon portion and a backside porous silicon portion formed in the semiconductor wafer, the backside porous silicon portion being at least partially exposed on a backside of the wafer device, the wafer device comprising a radio-frequency device; and
a trap-rich layer formed above the porous silicon layer, the oxide layer being formed over the trap-rich layer.
5. The wafer device of claim 4 wherein the trap-rich layer comprises polysilicon film.
6. The wafer device of claim 4 wherein the field-effect transistor is part of an active silicon layer that is wafer-bonded to the oxide layer.
7. The wafer device of claim 4 further comprising a metal stack formed above the field -effect transistor, the metal stack being at least partially covered by a passivation layer.