Integrated circuit structure in porous semiconductor region and method to form same
Embodiments of the disclosure provide a structure including a semiconductor substrate. The semiconductor substrate includes a porous semiconductor region, the porous semiconductor region including a cavity. The cavity includes a semiconductor layer therein. The porous semiconductor further includes a device. The device includes a first well at least partially in the semiconductor layer and a second well at least partially in the semiconductor layer and positioned laterally immediately adjacent the first well. The device further includes a first doped region abutting the first well; and a second doped region abutting the second well, wherein the first well and the second doped region have a first type conductivity and the second well and the first doped region having a second type conductivity that is different from the first type conductivity.
1 . A structure comprising:
a semiconductor substrate including a porous semiconductor region, the porous semiconductor region including a cavity;
a semiconductor layer in the cavity;
a device including:
a first well at least partially in the semiconductor layer;
a second well at least partially in the semiconductor layer and positioned laterally immediately adjacent the first well;
a first doped region abutting the first well; and
a second doped region abutting the second well, wherein the first well and the second doped region have a first type conductivity and the second well and the first doped region having a second type conductivity that is different from the first type conductivity;
a first contact region abutting the first well, physically separated from the first doped region, and having the first type conductivity; and
a second contact region abutting the second well, physically separated from the second doped region, and having the second type conductivity,
wherein the first well has a first proximal portion in the semiconductor layer positioned laterally immediately adjacent to the second well and a first distal portion in the porous semiconductor region of the semiconductor substrate on a first side of the cavity,
wherein the first well is deeper in the first proximal portion than in the first distal portion,
wherein the first doped region is in the semiconductor layer adjacent to the first proximal portion of the first well, and
wherein the first contact region is in the porous semiconductor region of the semiconductor substrate adjacent to the first distal portion of the first well.
2 . The structure of claim 1 , wherein the first contact region, the first well, and the second doped region have N-type conductivity and wherein the second contact region, the second well, and the first doped region have P-type conductivity.
3 . The structure of claim 1 , wherein the second well is entirely within the semiconductor layer.
4 . The structure of claim 1 , further comprising:
an anode contact on the first doped region; and
a cathode contact on the second doped region.
5 . The structure of claim 1 , wherein the device further includes a gate on the semiconductor layer over a junction between the first well and the second well.
6 . The structure of claim 1 , wherein the semiconductor layer is separated from a non-porous semiconductor region of the semiconductor substrate by the porous semiconductor region.
7 . The structure of claim 1 , wherein the semiconductor layer and the semiconductor substrate are comprised of monocrystalline silicon.
8 . A structure comprising:
a semiconductor substrate including a porous semiconductor region, the porous semiconductor region including a cavity;
a semiconductor layer in the cavity;
a device including:
a first well at least partially in the semiconductor layer;
a second well at least partially in the semiconductor layer and positioned laterally immediately adjacent the first well;
a first doped region abutting the first well; and
a second doped region abutting the second well, wherein the first well and the second doped region have a first type conductivity and the second well and the first doped region having a second type conductivity that is different from the first type conductivity;
a first contact region abutting the first well, physically separated from the first doped region, and having the first type conductivity; and
a second contact region abutting the second well, physically separated from the second doped region, and having the second type conductivity,
wherein the second well has a second proximal portion in the semiconductor layer positioned laterally immediately adjacent to the first well and a second distal portion in the porous semiconductor region of the semiconductor substrate on a second side of the cavity,
wherein the second well is deeper in the second proximal portion than in the second distal portion,
wherein the second doped region is in the semiconductor layer adjacent to the second proximal portion, and
wherein the second contact region is in the porous semiconductor region of the semiconductor substrate adjacent to the second distal portion of the second well.
9 . A structure comprising:
a semiconductor layer in a cavity within a porous semiconductor region of a semiconductor substrate; and
a device including:
a first well with a first proximal portion in the semiconductor layer and a first distal portion in the porous semiconductor region on a first side of the cavity;
a second well with a second proximal portion in the semiconductor layer positioned laterally immediately adjacent to the first well and a second distal portion in the porous semiconductor region on a second side of the cavity opposite the first side;
a first doped region abutting the first proximal portion of the first well;
a first contact region abutting the first distal portion of the first well and physically separated from the first doped region;
a second doped region abutting the second proximal portion of the second well; and
a second contact region abutting the second distal portion of the second well and physically separated from the second doped region,
wherein the first contact region, the first well, and the second doped region have a first type conductivity and the second contact region, the second well and the first doped region having a second type conductivity that is different from the first type conductivity.
10 . The structure of claim 9 , wherein the first contact region, the first well, and the second doped region have N-type conductivity and wherein the second contact region, the second well, and the first doped region have P-type conductivity.
11 . The structure of claim 9 , wherein the first well is deeper in the first proximal portion than in the first distal portion and wherein the second well is deeper in the second proximal portion than in the second distal portion.
12 . The structure of claim 9 , wherein the device further includes a gate on the semiconductor layer over a junction between the first well and the second well.