Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.
1. A sensor structure:
a photodetector landed and directly on a planar top surface of a waveguide structure, adjacent to one or more shallow trench isolation (STI) structures; and
an encapsulating material of a single material fully encapsulating and surrounding the photodetector, wherein the encapsulating material extends across and directly contacts a top surface of the photodetector, and the encapsulating material is landed fully on and within confines of the waveguide structure.
2. The sensor structure of claim 1 , wherein the waveguide structure is bounded by one or more shallow trench isolation (STI) structures.
3. The sensor structure of claim 1 , wherein the photodetector is fully landed and directly on the planar top surface of the waveguide structure, adjacent to the one or more STI structures.
4. The sensor structure of claim 1 , wherein the waveguide structure is tapered.
5. The sensor structure of claim 1 , wherein the waveguide structure is continuously tapered.
6. The sensor structure of claim 4 , wherein the photodetector is continuously tapered.
7. The sensor structure of claim 6 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
8. The sensor structure of claim 7 , wherein the double tapered photodetector includes a taper at its input end portion.
9. The sensor structure of claim 7 , wherein the continuously tapered waveguide structure is formed from silicon material or silicon on insulator material.
10. The sensor structure of claim 1 , wherein at least a portion of the encapsulating material encapsulating lateral sides of the photodetector lands on the waveguide structure.
11. The sensor structure of claim 1 , wherein the photodetector contacts the waveguide structure through a hole in the encapsulating material.
12. The sensor structure of claim 10 , wherein the photodetector is continuously tapered and fully lands on a planar surface of the waveguide structure.
13. The sensor structure of claim 10 , wherein the continuously tapered photodetector is formed as a double tapered photodetector.
14. The sensor structure of claim 11 , wherein the double tapered photodetector includes a taper at its input end portion.
15. The sensor structure of claim 1 , wherein the encapsulating material is over divots or recesses in the STI structures.
16. The sensor structure of claim 15 , wherein the divots or recesses are at a junction between an insulator material and an active semiconductor layer.
17. The sensor structure of claim 1 , wherein the encapsulating material is nitride or oxide.
18. The sensor structure of claim 1 , wherein the encapsulating material is in direct contact with the waveguide structure and the photodetector.
19. The sensor structure of claim 1 , wherein the encapsulating material is a dielectric material.
20. The sensor structure of claim 1 , wherein the waveguide structure is tapered, the photodetector is a double tapered photodetector, the double tapered photodetector includes a first taper which is tapered in a same horizontal taper direction as the waveguide structure and a second taper which is tapered in the same horizontal taper direction as the first taper, and the first taper is tapered at a different angle than the second taper.