Metal on metal multiple patterning
The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.
1. A structure, comprising:
a first metal layer patterned as a mandrel;
a dielectric spacer on the first metal layer;
a second metal layer on the dielectric spacer; and
at least one airgap between sections of patterned metal in the first layer,
wherein the at least one airgap is entirely surrounded by the dielectric spacer.
2. The structure of claim 1 , wherein the dielectric spacer comprises a low-k dielectric spacer.
3. The structure of claim 2 , wherein the low-k dielectric spacer has a k value less than 2.75.
4. The structure of claim 1 , wherein the first metal layer is a same material as the second metal layer.
5. The structure of claim 4 , wherein the first metal layer and the second metal layer comprises one of cobalt, ruthenium, nickel, aluminum, tungsten, and tantalum.
6. The structure of claim 1 , wherein the first metal layer is a different material than the second metal layer.
7. The structure of claim 1 , wherein the first metal layer comprises cobalt and the second metal layer comprises one of copper, cobalt, aluminum, ruthenium, and tungsten.
8. The structure of claim 1 , further comprising a metal cap on the second metal layer.
9. The structure of claim 1 , wherein the dielectric spacer comprises silicon dioxide (SiO 2 ).
10. A structure, comprising:
a metal mandrel with cuts along its longitudinal extent;
a metal layer on the metal mandrel;
a plurality of low-k dielectric spacers on sidewalls of the metal mandrel;
a metal cap on the metal layer; and
at least one airgap between sections of patterned metal in the metal mandrel,
wherein the at least one airgap is entirely surrounded by the low-k dielectric spacers.
11. The structure of claim 10 , further comprising a spin on dielectric material between the low-k dielectric spacers, and the low-k dielectric spacers having a k value less than 2.75.
12. The structure of claim 10 , wherein the metal mandrel and the metal layer comprises cobalt.
13. The structure of claim 10 , wherein the metal mandrel is a different material than the metal layer.
14. A structure, comprising:
a metal mandrel with cuts along its longitudinal extent;
a metal layer on the metal mandrel;
a plurality of low-k dielectric spacers on sidewalls of the metal mandrel; and
a metal cap on the metal layer
wherein the metal mandrel is a different material than the metal layer, and
the metal mandrel comprises cobalt and the metal layer comprises copper.
15. The structure of claim 10 , wherein the metal cap comprises one of Ta and cobalt.
16. The structure of claim 10 , wherein the low-k dielectric spacers are a sacrificial layer.
17. The structure of claim 10 , wherein the low-k dielectric spacers comprise silicon dioxide (SiO 2 ).
18. The structure of claim 1 , further comprising a metal cap which is deposited on the dielectric spacer which entirely surrounds the at least one airgap.
19. The structure of claim 18 , further comprising a nitrogen doped carbide on the sections of the patterned metal in the first layer.
20. The structure of claim 19 , wherein the at least one airgap comprises a plurality of pinched off airgaps between the sections of the patterned metal in the first layer.