Method for etching features in a stack
A method for etching features in a stack below a carbon containing mask is provided. The stack is cooled to a temperature below −20° C. An etch gas is provided comprising a free fluorine providing component, a hydrogen containing component, a hydrocarbon containing component, and a fluorocarbon containing component. A plasma is generated from the etch gas. A bias is provided with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the carbon containing mask.
1. A method for etching features in a stack below an amorphous carbon mask, comprising:
cooling the stack to a temperature below −20° C.;
providing an etch gas mixture comprising a free fluorine providing component gas, a H 2 gas, and a gas mixture comprising, a hydrocarbon containing component and a fluorocarbon containing component, wherein the fluorocarbon containing component comprises one of a fluorocarbon gas, hydrofluorocarbon gas or a gas of a fluorocarbon with an iodine component;
generating a plasma from the etch gas mixture;
providing a bias with a magnitude of at least about 400 volts to accelerate ions from the plasma to the stack; and
selectively etching features in the stack with respect to the amorphous carbon mask.
2. The method, as recited in claim 1 , wherein the etch gas mixture further comprises an iodine containing component.
3. The method, as recited in claim 1 , wherein the etch gas mixture is oxygen free and free from both C 4 F 8 and C 4 F 6 .
4. The method, as recited in claim 1 , wherein the etch gas mixture comprises NF 3 , H 2 , CF 3 I, CH 3 F, and CH 2 F 2 .
5. The method, as recited in claim 4 , wherein the etch gas mixture further comprises at least one of C 4 F 8 , C 3 F 8 , C 4 F 6 , SF 6 , O 2 , CF 4 , CH 4 , or CHF 3 .
6. The method, as recited in claim 1 , wherein the stack is supported on a chuck in an etch chamber, the method further comprising cooling the chuck to a temperature below −40° C.
7. The method, as recited in claim 1 , wherein and the stack includes a plurality of silicon oxide and silicon nitride bilayers.
8. The method, as recited in claim 7 , wherein the plurality of silicon oxide and silicon nitride bilayers include at least 48 bilayers.
9. The method, as recited in claim 7 , wherein the stack does not have a silicon containing mask.
10. The method, as recited in claim 1 , wherein the etch gas mixture further comprises NF 3 .
11. The method, as recited in claim 1 , wherein the etch gas mixture further comprises CF 3 I.
12. The method, as recited in claim 1 , wherein the features have a depth to neck aspect ratio of at least 30:1.
13. The method, as recited in claim 1 , wherein the etch gas mixture further comprises at least one of NF 3 or SF 6 .