Semiconductor packaging method, semiconductor package and stacked semiconductor packages
A semiconductor packaging method, a semiconductor package and stacked semiconductor packages are provided. The method includes providing a carrier ( 10 ) having a plurality of semiconductor chip receiving areas ( 12 ) and attaching a plurality of first semiconductor chips ( 14 ) to the semiconductor chip receiving areas ( 12 ). The first semiconductor chips ( 14 ) are encapsulated with a first encapsulant ( 20 ) and a plurality of electrical connections ( 24 ) is formed to the first semiconductor chips ( 14 ). At least a portion of the carrier ( 10 ) is removed to provide a heat release area ( 38 ).
1. A semiconductor package, comprising:
a first semiconductor chip having a plurality of circuit pads;
an electrically conductive layer provided over at least one of the circuit pads of the first semiconductor chip;
a first encapsulant encapsulating the first semiconductor chip;
a plurality of electrical connections to the first semiconductor chip, wherein the electrical connections to the first semiconductor chip comprises:
a plurality of vias extending through the first encapsulant to the first semiconductor chip, wherein a cross-sectional area of the vias is smaller than a surface area of the electrically conductive layer formed over the at least one of the circuit pads of the first semiconductor chip; and
a plurality of first traces on a surface of the first encapsulant, wherein the first traces are electrically connected by the vias to the first semiconductor chip;
a heat release area arranged to release heat generated by the first semiconductor chip, wherein the heat release area comprises one of:
a surface of a conductive layer to which a die pad is attached, wherein the first semiconductor chip is attached to the die pad;
a surface of a conductive layer to which the first semiconductor chip is attached;
a surface area of a heat sink attached to a conductive layer, wherein the first semiconductor chip is attached to the conductive layer;
a surface area of an array of heat sinks attached to a conductive layer, wherein the first semiconductor chip is attached to the conductive layer;
a surface area of a plurality of fins attached to a conductive layer, wherein the first semiconductor chip is attached to the conductive layer; and
a surface area of a heat sink attached to a conductive layer to which a die pad is attached, wherein the first semiconductor chip is attached to the die pad;
a plurality of connectors encapsulated by the first encapsulant; and
a plurality of openings formed in the conductive layer, the openings exposing a surface of the connectors.
2. The semiconductor package of claim 1 , further comprising:
a second encapsulant encapsulating the first traces; and
a plurality of openings extending through the second encapsulant to expose a surface of the first traces.
3. The semiconductor package of claim 1 , further comprising:
a plurality of conductive studs on the first traces; and
a second encapsulant encapsulating the first traces and the conductive studs, wherein a portion of the second encapsulant is removed, exposing a surface of the conductive studs.
4. The semiconductor package of claim 3 , further comprising a plurality of second traces on a surface of the second encapsulant.
5. The semiconductor package of claim 1 , wherein a surface area of the electrically conductive layer is greater than a surface area of the circuit pad over which the electrically conductive layer is formed.
6. The semiconductor package of claim 1 , wherein the electrically conductive layer comprises a pad portion positioned above the circuit pad over which the electrically conductive layer is formed and a line portion extending away from the circuit pad.
7. The semiconductor package of claim 6 , wherein the electrical connections to the first semiconductor chip are formed from the line portion of the electrically conductive layer.
8. The semiconductor package of claim 1 , further comprising at least one of a plurality of pads, a plurality of passive components, at least one strengthening element, an electromagnetic shielding structure and an inductor coil encapsulated by the first encapsulant.
9. A stacked semiconductor package, comprising:
a first semiconductor package in accordance with claim 2 ;
a plurality of first solder bumps attached to the exposed surface of the first traces;
a second semiconductor package comprising:
a second semiconductor chip;
a third encapsulant encapsulating the second semiconductor chip;
a plurality of electrical connections to the second semiconductor chip;
a plurality of second solder bumps attached to the electrical connections to the second semiconductor chip, wherein the second solder bumps are electrically coupled to the exposed surface of the connectors of the first semiconductor package.
10. A stacked semiconductor package, comprising:
a first semiconductor package in accordance with claim 1 ;
a second semiconductor package, wherein the second semiconductor package is a wafer-level package having a plurality of solder bumps and wherein the solder bumps are electrically coupled to the exposed surface of the connectors of the first semiconductor package.