Method and structure of three-dimensional chip stacking
A method includes placing a first plurality of device dies over a first carrier, with the first plurality of device dies and the first carrier in combination forming a first composite wafer. The first composite wafer is bonded to a second wafer, and the first plurality of device dies is bonded to a second plurality of device dies in the second wafer through hybrid bonding. The method further includes de-bonding the first carrier from the first plurality of device dies, encapsulating the first plurality of device dies in an encapsulating material, and forming an interconnect structure over the first plurality of device dies and the encapsulating material.
1. A method comprising:
placing a first plurality of device dies over a first carrier, with the first plurality of device dies and the first carrier in combination forming a first composite wafer;
placing a second plurality of device dies over a second carrier, with the second plurality of device dies and the second carrier in combination forming a second composite wafer;
bonding the first composite wafer to the second composite wafer, wherein the first plurality of device dies are bonded to the second plurality of device dies;
de-bonding the second carrier from the second plurality of device dies;
encapsulating the first plurality of device dies and second the plurality of device dies in an encapsulant; and
forming an interconnect structure over the second plurality of device dies and the encapsulant.
2. The method of claim 1 further comprising forming a plurality of metal posts over the first carrier, wherein the plurality of metal posts are encapsulated in the encapsulant.
3. The method of claim 2 further comprising, after the encapsulating, planarizing the encapsulant, the second plurality of device dies, and the plurality of metal posts.
4. The method of claim 2 , wherein in the bonding the first composite wafer to the second composite wafer, one of the plurality of metal posts is used as an alignment mark.
5. The method of claim 1 further comprising, after the interconnect structure is formed, de-bonding the first carrier.
6. The method of claim 1 further comprising:
forming a release layer on the second carrier, with the plurality of second device dies being placed on the release layer; and
forming an alignment mark in the release layer, with the alignment mark being used aligning the bonding.
7. The method of claim 6 , wherein the forming the alignment mark in the release layer comprises forming an opening in the release layer as the alignment mark.
8. The method of claim 1 , wherein during the bonding, empty spaces exist between the first plurality of device dies.
9. The method of claim 8 , wherein during the bonding, the empty spaces further separate the second plurality of device dies from each other.
10. The method of claim 1 , wherein each of the second plurality of device dies comprises:
a semiconductor substrate; and
a plurality of through-vias extending into the semiconductor substrate, wherein the method further comprises planarizing the semiconductor substrate to reveal the plurality of through-vias, and wherein conductive features in the interconnect structure are electrically connected to the plurality of through-vias.
11. A method comprising:
forming a first release layer over a first carrier;
placing a first plurality of device dies over the first release layer to form a first composite wafer;
forming a second release layer over a second carrier;
placing a second plurality of device dies over the second release layer to form a second composite wafer;
bonding the first composite wafer to the second composite wafer;
de-bonding the second carrier from the second plurality of device dies; and
de-bonding the first carrier from the first plurality of device dies.
12. The method of claim 11 , wherein when the first composite wafer is bonded to the second composite wafer, empty spaces separate the first plurality of device dies from each other.
13. The method of claim 12 , wherein when the first composite wafer is bonded to the second composite wafer, the empty spaces further separate the second plurality of device dies from each other.
14. The method of claim 11 further comprising, after the first composite wafer is bonded to the second composite wafer, encapsulating both of the first plurality of device dies and the second plurality of device dies in a same encapsulant.
15. The method of claim 11 further comprising forming a plurality of metal posts on the first release layer, with the plurality of metal posts being parts of the first composite wafer.
16. A method comprising:
bonding a first composite wafer to a second composite wafer, wherein a first plurality of device dies in the first composite wafer are bonded to a second plurality of device dies in the second composite wafer with a one-to-one correspondence;
after the bonding, encapsulating the first plurality of device dies and the second plurality of device dies in an encapsulant;
performing a planarization process on the encapsulant to reveal the second plurality of device dies; and
forming redistribution lines over the second plurality of device dies.
17. The method of claim 16 further comprising forming a plurality of conductive posts as parts of the first composite wafer, wherein the encapsulant further encapsulates the plurality of conductive posts therein.
18. The method of claim 17 , wherein during the bonding, the plurality of conductive posts are spaced apart from the first plurality of device dies by empty spaces.
19. The method of claim 16 further comprising, de-bonding a second carrier in the second composite wafer from the second plurality of device dies, so that the second plurality of device dies are left over the first plurality of device dies.
20. The method of claim 19 , wherein at a time after the second carrier is de-bonded, the second plurality of device dies are discrete device dies separated from each other.