IP Library Granted Patent US 10,872,774
Granted Patent B2
US 10,872,774 · App. 16/286,303 · Granted Dec 22, 2020

Plasma processing apparatus and plasma processing method

Inventors: Hao Xu (Tokyo, JP); Hiroshige Uchida (Tokyo, JP); Shigeru Nakamoto (Tokyo, JP); Kousuke Fukuchi (Tokyo, JP); Satomi Inoue (Tokyo, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
H01L21/3065H01J37/226H01J37/32082H01J37/32715H01L21/0234H01L21/02315H01L21/02348H01L21/32136H01L21/76826H01L21/76862H01J2237/3343H01L21/67069
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Quick Facts
Patent No.
US 10,872,774
App. No.
16/286,303
Granted
Dec 22, 2020
Kind
B2
Abstract

A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.

Claims (25)

1. A plasma processing apparatus comprising:

a processing chamber in which a sample is subjected to plasma processing;

a radio frequency power supply supplying radio frequency power that generates plasma;

a sample stage on which the sample is placed;

an ultraviolet light source applying an ultraviolet ray; and

a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber,

wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, and

wherein the controller is configured to control the ultraviolet light source each that before the direct current voltage is applied to the electrode, the pulse-modulated ultraviolet ray is applied into the process chamber.

2. The plasma processing apparatus according to claim 1 ,

wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to the sample.

3. The plasma processing apparatus according to claim 2 ,

wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to a negatively charged region of a sample electrostatically chucked to the sample stage.

4. A plasma processing apparatus comprising:

a processing chamber in which a sample is subjected to plasma processing;

a radio frequency power supply supplying radio frequency power that generates plasma;

a sample stage on which the sample is placed;

an ultraviolet light source applying an ultraviolet ray; and

a controller configured to control the radio frequency power supply and the ultraviolet light source such that the radio frequency power is supplied into the processing chamber and a pulse-modulated ultraviolet ray is applied into the processing chamber,

wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, and

wherein the controller is configured to control the ultraviolet light source each that before the direct current voltage is applied to the electrode, the pulse-modulated ultraviolet ray is applied into the process chamber.

5. The plasma processing apparatus according to claim 4 ,

wherein the ultraviolet light source is disposed such that the pulse-modulated ultraviolet ray is applied to the sample.

6. A plasma processing method of processing a sample in a processing chamber using plasma generated by radio frequency power, the method comprising:

before radio frequency power is supplied into the processing chamber, applying a pulse-modulated ultraviolet ray into the processing chamber; and

after the pulse-modulated ultraviolet ray is applied into the processing chamber, applying a direct current voltage to an electrode of a sample stage to electrostatically chuck said sample using the direct current voltage.

Assignments (2)
CHANGE OF NAME Recorded Mar 25, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052225/0894 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2019
From: XU, HAO; UCHIDA, HIROSHIGE; NAKAMOTO, SHIGERU; FUKUCHI, KOUSUKE; INOUE, SATOMI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 048545/0448 →
Priority Claims (1)
JP 2018-138374 · Jul 24, 2018 · national
Continuity (1)
Related Publication 20200035445A1 · Jan 30, 2020