Heterojunction bipolar transistor with emitter base junction oxide interface
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor having an emitter base junction with a silicon-oxygen lattice interface and methods of manufacture. The device includes: a collector region buried in a substrate; shallow trench isolation regions, which isolate the collector region buried in the substrate; a base region on the substrate and over the collector region; an emitter region composed of a single crystalline of semiconductor material and located over with the base region; and an oxide interface at a junction of the emitter region and the base region.
1. A device comprising:
a collector region buried in a substrate;
shallow trench isolation regions, which isolate the collector region buried in the substrate;
a base region on the substrate and over the collector region;
an emitter region composed of a single crystalline of semiconductor material and located over the base region; and
an oxide interface at a junction of the emitter region and the base region
wherein the oxide interface comprises a sub-monolayer oxide or super-lattice of oxygen.
2. The device of claim 1 , wherein the oxide interface comprises a super-lattice of silicon and the oxygen.
3. The device of claim 1 , wherein the base region is composed of single crystalline semiconductor material.
4. The device of claim 3 , wherein the emitter region is composed of Si or SiGe or a combination thereof.
5. The device of claim 3 , wherein the base region is composed of Si or SiGe or a combination thereof.
6. The device of claim 1 , wherein the emitter region is a doped semiconductor material with different doping concentrations along its height.
7. The device of claim 1 , further comprising a second oxide interface within the emitter region, above the oxide interface.
8. The device of claim 7 , wherein the emitter region is a doped semiconductor material having a first concentration between the oxide interface and the second oxide interface, and a second concentration at a top portion thereof.
9. The device of claim 7 , wherein the second oxide interface is a sub-monolayer oxide or super-lattice of oxygen.
10. The device of claim 1 , wherein the emitter region is an epitaxial grown semiconductor material directly on the oxide interface.
11. A bipolar device, comprising:
a collector region in a semiconductor material;
a single crystalline semiconductor base on the semiconductor material and over the collector region;
a single crystal semiconductor emitter over the single crystalline semiconductor base; and
an oxide at a junction between the single crystalline semiconductor base and the single crystal semiconductor emitter,
wherein the oxide comprises a sub-monolayer oxide or super-lattice oxygen.
12. The bipolar device of claim 11 , wherein the single crystalline semiconductor base is composed of SiGe.
13. The bipolar device of claim 12 , wherein the single crystal semiconductor emitter is composed of Si or SiGe or a combination thereof.
14. The bipolar device of claim 13 , wherein the single crystal semiconductor emitter is grown selectively or non-selectively or a combination of both selective and non-selective growth.
15. The bipolar device of claim 13 , wherein the sub-monolayer oxide is provided at an emitter base junction and within the single crystal emitter.
16. The bipolar device of claim 15 , wherein the single crystal semiconductor emitter has different dopant concentrations, a first of the dopant concentrations provided between the sub-monolayer oxide at the emitter base junction and within the single crystal emitter and a second of the dopant concentrations at a top portion of the single crystal semiconductor emitter.
17. The bipolar device of claim 13 , wherein the comprises a thickness of 5 Å or less.
18. A device comprising:
a collector region buried in a substrate;
a base region on the substrate and over the collector region;
an emitter region located over the base region;
insulator material on sides of the emitter region and comprising an opening to expose the base region; and
a sub-monolayer oxide or super-lattice of oxygen oxide in the opening and at an interface of the emitter region and the base region.