Semiconductor device

1. A method of fabricating a semiconductor device, comprising:

providing a substrate including a cell region and a peripheral region;

forming a first insulating layer on the cell region and the peripheral region of the substrate;

forming a first line and a first defect detection line on the first insulating layer on the cell region and the peripheral region, respectively;

forming a second insulating layer to cover the first line and the first defect detection line;

forming a first etch stop layer on the second insulating layer;

sequentially etching the first etch stop layer and the second insulating layer to form a first contact hole exposing the first line and to form a second contact hole exposing the first defect detection line;

forming a third insulating layer on the first etch stop layer to fill the first contact hole and the second contact hole;

removing the third insulating layer in the first contact hole and the second contact hole and patterning the third insulating layer to form a first groove exposing the first contact hole and a second groove exposing the second contact hole;

forming a first contact plug in the first contact hole and a second line connected to the first contact plug on the first etch stop layer; and

forming a second contact plug in the second contact hole and a second defect detection line connected to the second contact plug on the first etch stop layer,

wherein:

the first line, the first contact plug and the second line compose an interconnection structure; and

the first defect detection line, the second contact plug and the second defect detection line compose a defect detection line;

wherein the defect detection line substantially encloses the interconnection structure in plan view; and

wherein bottom surfaces of the second line and the second defect detection line are both in contact with a top surface of the first etch stop layer.

2. The method of claim 1 , wherein the forming of the first contact plug and the second line is performed simultaneously with the forming of the second contact plug and the second defect detection line.

3. The method of claim 1 , further comprising:

forming a third line and a third defect detection line on the third insulating layer on the cell region and the peripheral region, respectively,

wherein:

the interconnection structure further comprises the third line, and

the defect detection line further comprises the third defect detection line.

4. The method of claim 3 , before forming the third line and the third defect detection line, further comprising:

patterning the third insulating layer to form a third contact hole and a fourth contact hole that expose the second line and the second defect detection line, respectively,

wherein the forming of the interconnection structure and the defect detection line further comprises:

forming a third contact plug and a fourth contact plug that fill the third contact hole and the fourth contact hole, respectively,

wherein:

the interconnection structure further comprises the third contact plug to connect the second line and the third line to each other, and

the defect detection line further comprises the fourth contact plug to connect the second defect detection line and the third defect detection line to each other.

5. The method of claim 4 , wherein the forming of the third contact plug and the fourth contact plug is performed simultaneously with the forming of the third line and the third defect detection line.

6. The method of claim 4 , further comprising:

forming a second etch stop layer on the third insulating layer,

wherein the patterning of the third insulating layer comprises patterning the second etch stop layer.

7. The method of claim 1 , wherein the forming of the second defect detection line comprises:

forming a first detection pad and a second detection pad electrically connected to end portions of the second defect detection line.

8. The method of claim 1 , wherein the first defect detection line has a shape corresponding to that of the second defect detection line.

9. The method of claim 1 , wherein the forming of the second defect detection line comprises forming patterns which are horizontally separated from each other.

10. The method of claim 1 ,

wherein

the second line is formed in the first groove and the second defect detection line is formed in the second groove.

11. The method of claim 10 , further comprising:

forming a fourth insulating layer on the third insulating layer;

patterning the fourth insulating layer to form a third groove and a third contact hole on a bottom of the third groove to expose the second line and to form a fourth groove and a fourth contact hole on a bottom of the fourth groove to expose the second defect detection line;

forming a second conductive layer to fill the third groove, the third contact hole, the fourth groove and the fourth contact hole; and

polishing the second conductive layer to expose the fourth insulating layer, to form a third line in the third groove and a third contact plug in the third contact hole, and to form a third defect detection line in the fourth groove and a fourth contact plug in the fourth contact hole,

wherein:

the interconnection structure further comprises the third line and the third contact plug electrically connected to the second line, and

the defect detection line further comprises the third defect detection line and the fourth contact plug electrically connected to the second defect detection line.

12. The method of claim 1 , wherein a sidewall of the first etch stop layer is aligned with a sidewall of the second insulating layer under the first etch stop layer in the first contact hole and the second contact hole.