Three-dimensional memory device containing a replacement buried source line and methods of making the same
An alternating stack of insulating layers and spacer material layers is formed over a source-level sacrificial layer overlying a substrate. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory stack structures including a respective vertical semiconductor channel and a respective memory film are formed through the alternating stack. A source-level cavity is formed by removing the source-level sacrificial layer. Semiconductor pillar structures may be used to provide mechanical support to the alternating stack during formation of the source-level cavity. A source-level semiconductor material layer can be formed in the source-level cavity. The source-level semiconductor material layer adjoins bottom end portions of the vertical semiconductor channels and laterally surrounds the semiconductor pillar structures. The source-level semiconductor material layer may be electrically isolated from a substrate semiconductor material layer in the substrate by a series connection of two p-n junctions having opposite polarities.
1. A three-dimensional memory device, comprising:
semiconductor pillar structures adjoined to a top surface of a semiconductor material layer;
an alternating stack of insulating layers and electrically conductive layers overlying the semiconductor pillar structures;
memory stack structures vertically extending through the alternating stack, wherein each of the memory stack structures comprises a respective vertical semiconductor channel and a respective vertical stack of memory elements located at levels of the electrically conductive layers;
a source-level semiconductor material layer in contact with bottom end portions of the vertical semiconductor channels and laterally surrounding the semiconductor pillar structures;
a dielectric liner layer laterally surrounding each of the semiconductor pillar structures, disposed between the source-level semiconductor material layer and the semiconductor material layer, and providing electrical isolation of the source-level semiconductor material layer from the semiconductor material layer and from the semiconductor pillar structures; and
a source-level metallic layer including a horizontal portion located between the semiconductor material layer and the source-level semiconductor material layer and including tubular portions, each of the tubular portions laterally surrounding a respective one of the semiconductor pillar structures and contacting a respective sidewall of the source-level semiconductor material layer.
2. The three-dimensional memory device of claim 1 , wherein:
a bottommost surface of each of the vertical semiconductor channels directly contacts the source-level semiconductor material layer; and
a lower portion of an outer sidewall of each of the vertical semiconductor channels directly contacts the source-level semiconductor material layer.
3. The three-dimensional memory device of claim 1 , wherein:
each of the memory stack structures includes a memory film having a tubular configuration, laterally surrounding and contacting a respective one of the vertical semiconductor channels; and
each of the memory films has an annular bottom surface that contact the source-level semiconductor material layer.
4. The three-dimensional memory device of claim 1 , wherein:
the vertical semiconductor channels have a doping of a first conductivity type;
the source-level semiconductor material layer has a doping of a second conductivity type that is opposite of the first conductivity type; and
p-n junctions are present at interfaces between the vertical semiconductor channels and the source-level semiconductor material layer.
5. A three-dimensional memory device, comprising:
semiconductor structures adjoined to a top surface of a semiconductor material layer; an alternating stack of insulating layers and electrically conductive layers overlying the semiconductor structures;
memory stack structures vertically extending through the alternating stack, wherein each of the memory stack structures comprises a respective vertical semiconductor channel and a respective vertical stack of memory elements located at levels of the electrically conductive layers;
a source-level semiconductor material layer in contact with bottom end portions of the vertical semiconductor channels and located laterally adjacent to the semiconductor structures;
a dielectric liner layer laterally surrounding each of the semiconductor structures, disposed between the source-level semiconductor material layer and the semiconductor material layer, and providing electrical isolation of the source-level semiconductor material layer from the semiconductor material layer and from the semiconductor structures; and
a source-level metallic layer including a horizontal portion located between the semiconductor material layer and the source-level semiconductor material layer and including tubular portions, each of the tubular portions laterally surrounding a respective one of the semiconductor structures and contacting a respective sidewall of the source-level semiconductor material layer.