Vehicle, display device and manufacturing method for a semiconductor device
To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.
1. A method for manufacturing a semiconductor device, the method comprising:
forming a separation layer over a substrate;
forming a peeled layer over the separation layer;
condensing a laser light to form a liner beam;
irradiating the separation layer with the liner beam through the substrate; and
separating the substrate from the peeled layer,
wherein the peeled layer comprises a transistor comprising a semiconductor layer.
2. The method according to claim 1 ,
wherein the peeled layer is capable of curving in a first direction,
wherein a scan direction of the liner beam and a direction of a channel length of the transistor which is a direction from one of a source electrode and a drain electrode to the other of the source electrode and the drain electrode are each a second direction, and
wherein the first direction is perpendicular to the second direction.
3. The method according to claim 1 , wherein the separation layer comprises an amorphous silicon or a polysilicon.
4. The method according to claim 1 , wherein the liner beam is irradiated to a back surface of the separation layer through the substrate.