Temperature based programming in memory
Various methods include receiving, by a controller, a temperature reading of a memory array, the temperature reading includes a temperature value; determining the temperature value is below a first threshold; in response, modifying a duration of a verify cycle of a write operation to create a modified verify cycle; then programming a first data into the memory array using the write operation that uses the modified verify cycle. Methods additionally include receiving a second temperature reading of the memory array, the second temperature reading includes a second temperature value; determining the second temperature value is below a second threshold, in response, decreasing the duration of a verify cycle of a verify cycle to create a second verify cycle, where the second verify cycle is shorter than the modified verify cycle; and then programming a second data into the memory array using the write operation that uses the second verify cycle.
1. A storage system, configured to modify clock parameters of a write operation, comprising:
a memory array; and
a controller coupled to the memory array, wherein the controller is configured to:
receive a temperature reading of the memory array, the temperature reading includes a temperature value;
determine the temperature value is below a first threshold; in response,
decrease a clock timing to a lower temperature timing, the clock timing associated with a write operation of the memory array; and then
program a first data into the memory array using the write operation that uses the lower temperature timing to decrease a duration of a verify cycle of the write operation.
2. The storage system of claim 1 , wherein the controller is further configured to:
receive a second temperature reading of the memory array, the second temperature reading including a second temperature value, wherein the second temperature value is lower than the temperature value;
determine the second temperature value is below a second threshold; in response,
further decrease the clock timing to a second lower temperature timing; and then
program a second data into the memory array using a write operation that uses the second lower temperature timing.
3. The storage system of claim 2 , wherein the temperature value is a first temperature value, and a difference between the first temperature value and the second temperature value is at least ten degrees Celsius.
4. The storage system of claim 1 , wherein the controller is further configured to:
receive a second temperature reading of the memory array, the second temperature reading including a second temperature value, wherein the second temperature value is higher than the temperature value;
determine the second temperature value is above the first threshold; in response,
increase the clock timing to a high temperature timing; and then
program a second data into the memory array using a write operation that uses the high temperature timing.
5. The storage system of claim 4 , wherein a duration of programming the second data is longer than a duration of programming the first data.
6. The storage system of claim 1 , further comprising:
performing a read operation; and
modifying a clock timing associated with the read operation based on the temperature value.
7. The storage system of claim 1 , wherein
the temperature value is a first temperature value that is lower than a second temperature value, and
a duration of programming the first data is lower than a duration of programming a second data into the memory array at the second temperature value.
8. The storage system of claim 7 , wherein a number of programming pulses used to program the first data is greater than a number of programming pulses used to program the second data.
9. A memory controller, comprising:
a first terminal configured to couple to a memory array,
the memory controller configured to:
receive a temperature reading of the memory array, the temperature reading includes a temperature value;
determine the temperature value is below a first threshold; in response,
decrease a clock timing to a lower temperature timing, the clock timing associated with a write operation of the memory array; and then
program a first data into the memory array using the write operation that uses the lower temperature timing to reduce a duration of a verify cycle of the write operation.
10. The memory controller of claim 9 , further configured to:
receive a second temperature reading of the memory array, the second temperature reading including a second temperature value, wherein the second temperature value is higher than the temperature value;
determine the second temperature value is above the first threshold; in response,
increase the clock timing to a high temperature timing; and then
program a second data into the memory array using a write operation that uses the high temperature timing.
11. The memory controller of claim 10 , wherein a duration of programming the second data is longer than a duration of programming the first data.
12. The memory controller of claim 10 , wherein a duration of programming the second data is the same as a duration of programming the first data.
13. The memory controller of claim 9 , wherein the controller is further configured to:
receive a second temperature reading of the memory array, the second temperature reading including a second temperature value, wherein the second temperature value is lower than the temperature value;
determine the second temperature value is below a second threshold; in response,
further decrease the clock timing to a second lower temperature timing; and then
program a second data into the memory array using a write operation that uses the second lower temperature timing.
14. The memory controller of claim 13 , wherein a duration of programming the second data is less than a duration of programming the first data.
15. The memory controller of claim 13 , where the temperature value is a first temperature value, and a difference between the first temperature value and the second temperature value is at least ten degrees Celsius.
16. The memory controller of claim 9 , further configured to store a set of clock timings, wherein:
a respective clock timing of the set of clock timings is associated with a first range of temperature values, and
another respective clock timing of the set of clock timings is associated with a second range of temperature values.
17. A method for dynamically adjusting clock parameters of a write operation, comprising:
receiving, by a controller, a temperature reading of a memory array, the temperature reading includes a temperature value;
determining the temperature value is below a first threshold; in response,
reducing a duration of a verify cycle of a write operation to create a modified verify cycle; and then
programming a first data into the memory array using the write operation that uses the modified verify cycle.
18. The method of claim 17 , further comprising,
prior to programming the first data into the memory array, modifying a duration of a programming cycle of the write operation based on the temperature value to create a modified programming cycle.
19. The method of claim 17 , further comprising:
receiving a second temperature reading of the memory array, the second temperature reading includes a second temperature value, wherein the second temperature value is lower than the temperature value;
determining the second temperature value is below a second threshold; in response,
decreasing the duration of a verify cycle of a write operation to create a second verify cycle, wherein the second verify cycle is shorter than the modified verify cycle; and then
programming a second data into the memory array using the write operation that uses the second verify cycle.