Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
1. An imaging device, comprising:
a first substrate including a photodiode, a floating diffusion, a first plurality of transistors and a first electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and
a second substrate including a second electrode at a first surface side of the second substrate and a second plurality of transistors,
wherein the first substrate and the second substrate are bonded to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing each other,
wherein at least a portion of a first side of the first electrode is covered by a first insulating film,
wherein the first side of the first electrode is closer to the light incident surface side of the first substrate than a second side of the first electrode,
wherein the first side of the first electrode is opposite the second side of the first electrode, and
wherein a portion of the second side of the first electrode and a portion of the first insulating film directly contact the second electrode.
2. The imaging device according to claim 1 , wherein the first insulating film includes one of Ti, Ta, Ru, or any nitrides of Ti, Ta, or Ru.
3. The imaging device according to claim 1 , wherein, except for a bonding face of the first electrode, the first electrode is covered by the first insulating film.
4. The imaging device according to claim 3 , wherein, except for a bonding face of the second electrode, the second electrode is covered by a second insulating film.
5. The imaging device according to claim 1 , wherein third and fourth sides of the first electrode extend between the first side of the first electrode and the second side of the first electrode, and wherein the first side, the third side, and the fourth side of the first electrode are disposed in the first interlayer insulating film.
6. The imaging device according to claim 5 , wherein a portion of the first interlayer insulating film is bonded to the second electrode.
7. The imaging device according to claim 1 , wherein the first electrode and the second electrode are different sizes.
8. The imaging device according to claim 7 , wherein the first electrode is smaller than the second electrode.
9. The imaging device according to claim 1 , wherein the first insulating film is a barrier metal film.
10. An imaging device, comprising:
a first substrate including a photodiode, a floating diffusion, a first plurality of transistors and a first wiring layer, wherein the first wiring layer includes a first electrode at a first surface side of the first substrate opposite to a light incident surface side of the first substrate; and
a second substrate including a second plurality of transistors and a second wiring layer, wherein the second wiring layer includes a second electrode at a first surface side of the second substrate,
wherein the first substrate and the second substrate are bonded to each other such that the first surface side of the first substrate and the first surface side of the second substrate are facing beach other, and
wherein the first electrode and the second electrode are different sizes,
wherein at least a first portion of a first surface of the second electrode directly contacts a first surface of the first electrode,
wherein at least a portion of a second surface of the first electrode that is opposite the first surface of the first electrode is covered by a first insulating film, and
wherein at least a second portion of the first surface of the second electrode directly contacts the first insulating film.
11. The imaging device according to claim 10 , wherein the first electrode is smaller than the second electrode.
12. The imaging device according to claim 10 , wherein a second insulating film covers at least a portion of the second electrode.
13. The imaging device according to claim 12 , wherein the first insulating film and the second insulating film include one of Ti, Ta, Ru or any nitrides of Ti, Ta, or Ru.
14. The imaging device according to claim 10 , wherein, except for a bonding face of the first electrode, the first electrode is covered by the first insulating film.
15. The imaging device according to claim 10 , wherein, except for a bonding face of the second electrode, the second electrode is covered by a second insulating film.
16. The imaging device according to claim 10 , wherein a portion of the first interlayer insulating film is bonded to the second electrode.
17. The imaging device according to the claim 12 , wherein the first insulating film and the second insulating film are barrier metal films.