Three-dimensional device with bonded structures including a support die and methods of making the same
A memory die including a three-dimensional array of memory elements and a logic die including a peripheral circuitry that support operation of the three-dimensional array of memory elements can be bonded by die-to-die bonding to provide a bonded assembly. External bonding pads for the bonded assembly can be provided by forming recess regions through the memory die or through the logic die to physically expose metal interconnect structures within interconnect-level dielectric layers. The external bonding pads can include, or can be formed upon, a physically exposed subset of the metal interconnect structures. Alternatively or additionally, laterally-insulated external connection via structures can be formed through the bonded assembly to multiple levels of the metal interconnect structures. Further, through-dielectric external connection via structures extending through a stepped dielectric material portion of the memory die can be physically exposed, and external bonding pads can be formed thereupon.
1. A bonded assembly comprising:
a memory die comprising an alternating stack of insulating layers and electrically conductive layers that has stepped surfaces, memory stack structures vertically extending through the alternating stack, a stepped dielectric material portion contacting the stepped surface of the alternating stack, a through-dielectric external connection via structure vertically extending through the stepped dielectric material portion; memory-side metal interconnect structures included in memory-side interconnect-level dielectric layers, and memory-side bonding pads;
a logic die comprising a semiconductor substrate, semiconductor devices located on the semiconductor substrate and including a peripheral circuitry configurated to control operation of the memory stack structures within the memory die, logic-side metal interconnect structures included in logic-side interconnect-level dielectric layers, and logic-side bonding pads that are bonded to the memory-side bonding pads of the memory die at a die-to-die bonding interface; and
an external bonding pad located on a surface of the stepped dielectric material portion and contacting a distal planar surface of the through-dielectric external connection via structure,
wherein:
the distal planar surface of the through-dielectric external connection via structure is within a horizontal plane including a first planar horizontal surface of the stepped dielectric material portion;
the through-dielectric external connection via structure comprises a proximal planar surface that contacts one of the memory-side metal interconnect structures; and
the proximal planar surface is vertically spaced from a horizontal plane including the die-to-die bonding interface by a lesser vertical separation distance than the memory stack structures are from the horizontal plane including the die-to-die bonding interface.
2. The bonded assembly of claim 1 , further comprising a solder ball bonded to the external bonding pad.
3. The bonded assembly of claim 1 , wherein the logic-side bonding pads are bonded to the memory-side bonding pads by copper-to-copper bonding.
4. The bonded assembly of claim 1 , wherein:
each of the memory stack structures comprises a respective vertical semiconductor channel including a proximal end and a distal end that is vertically spaced from a horizontal plane including the die-to-die bonding interface by a greater vertical distance than the proximal end is from the horizontal plane including the die-to-die bonding interface; and
a source semiconductor layer is located on the alternating stack, and is electrically connected to the distal ends of the vertical semiconductor channels.
5. The bonded assembly of claim 4 , wherein the distal planar surface of the through-dielectric external connection via structure is located within a horizontal plane including a planar surface of the source semiconductor layer that is parallel to the horizontal plane including the die-to-die bonding interface.
6. The bonded assembly of claim 4 , wherein the source semiconductor layer is electrically connected to the distal ends of the vertical semiconductor channels through:
direct contacts between the source semiconductor layer and horizontal planar surfaces of the distal ends of the vertical semiconductor channels; or
pedestal channel portions directly contacting the source semiconductor layer and horizontal planar surfaces of the distal ends of the vertical semiconductor channels.
7. The bonded assembly of claim 4 , wherein the source contact layer is electrically connected to the distal ends of the vertical semiconductor channels through direct contact between cylindrical sidewall surfaces of the distal ends of the vertical semiconductor channels and the source semiconductor layer.
8. The bonded assembly of claim 4 , further comprising an additional external bonding pad located on a distal planar surface of the source semiconductor layer.
9. The bonded assembly of claim 1 , wherein:
the memory stack structures comprise a three-dimensional array of memory elements;
the memory die comprises a set of word lines for the three-dimensional array of memory elements and a set of bit lines for the three-dimensional array of memory elements; and
the peripheral circuitry is configured to drive at least one set among the set of word lines and the set of bit lines.
10. The bonded assembly of claim 9 , wherein:
the bit lines are connected to a respective subset of the vertical semiconductor channels, and are connected to bit line drivers within the peripheral circuitry through first electrically conductive paths including a first bonded subset of the memory-side bonding pads and the logic-side bonding pads; and
the electrically conductive layers comprise the word lines, and are connected to word line drivers within the peripheral circuitry through second electrically conductive paths including a second bonded subset of the memory-side bonding pads and the logic-side bonding pads.
11. A bonded assembly comprising:
a memory die comprising an alternating stack of insulating layers and electrically conductive layers that has stepped surfaces, memory stack structures vertically extending through the alternating stack, a stepped dielectric material portion contacting the stepped surface of the alternating stack, a through-dielectric external connection via structure vertically extending through the stepped dielectric material portion; memory-side metal interconnect structures included in memory-side interconnect-level dielectric layers, and memory-side bonding pads;
a logic die comprising a semiconductor substrate, semiconductor devices located on the semiconductor substrate and including a peripheral circuitry configurated to control operation of the memory stack structures within the memory die, logic-side metal interconnect structures included in logic-side interconnect-level dielectric layers, and logic-side bonding pads that are bonded to the memory-side bonding pads of the memory die at a die-to-die bonding interface; and
an external bonding pad located on a surface of the stepped dielectric material portion and contacting a distal planar surface of the through-dielectric external connection via structure, wherein:
each of the memory stack structures comprises a respective vertical semiconductor channel including a proximal end and a distal end that is vertically spaced from a horizontal plane including the die-to-die bonding interface by a greater vertical distance than the proximal end is from the horizontal plane including the die-to-die bonding interface; and
a source semiconductor layer is located on the alternating stack, and is electrically connected to the distal ends of the vertical semiconductor channels.
12. The bonded assembly of claim 11 , wherein the proximal planar surface of the through-dielectric external connection via structure is located within a horizontal plane including a planar surface of the source semiconductor layer that is parallel to the horizontal plane including the die-to-die bonding interface.
13. The bonded assembly of claim 11 , wherein the source semiconductor layer is electrically connected to the distal ends of the vertical semiconductor channels through:
direct contacts between the source semiconductor layer and horizontal planar surfaces of the distal ends of the vertical semiconductor channels; or
pedestal channel portions directly contacting the source semiconductor layer and horizontal planar surfaces of the distal ends of the vertical semiconductor channels.
14. The bonded assembly of claim 11 , wherein the source contact layer is electrically connected to the distal ends of the vertical semiconductor channels through direct contact between cylindrical sidewall surfaces of the distal ends of the vertical semiconductor channels and the source semiconductor layer.
15. The bonded assembly of claim 11 , further comprising an additional external bonding pad located on a distal planar surface of the source semiconductor layer.