Bonded assembly including interconnect-level bonding pads and methods of forming the same
A method of forming a bonded assembly includes providing a first semiconductor die containing and first metallic bonding structures and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures, providing a second semiconductor die containing second metallic bonding structures, disposing the second semiconductor die in contact with the first semiconductor die, and annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.
1. A method of forming a bonded assembly, comprising:
providing a first semiconductor die, wherein the first semiconductor die comprises first semiconductor devices, first interconnect-level dielectric material layers embedding first metal interconnect structures and first metallic bonding structures, and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures;
providing a second semiconductor die, wherein the second semiconductor die comprises second semiconductor devices, second interconnect-level dielectric material layers embedding second metal interconnect structures, and second metallic bonding structures;
disposing the second semiconductor die in contact with the first semiconductor die; and
annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.
2. The method of claim 1 , further comprising:
depositing a dielectric capping material layer over the first interconnect-level dielectric material layers;
forming the first dielectric capping layer by planarizing the dielectric capping material layer; and
patterning the first dielectric capping layer to form the openings through the first dielectric capping layer.
3. The method of claim 1 , wherein the first dielectric capping layer further contacts distal horizontal surfaces of a subset of the first metal interconnect structures which comprise first metal lines having a respective uniform width along a respective widthwise direction.
4. The method of claim 1 , wherein each of the first subset of the first metallic bonding structures comprises a respective vertically protruding portion that protrudes through a respective opening in the first dielectric capping layer and contacting a bonding surface of the respective one of the first set of the second metallic bonding structures.
5. The method of claim 1 , wherein:
the second metallic bonding structures comprise an array of metal bonding pads embedded in a pad-level dielectric layer that overlies the second interconnect-level dielectric material layers; and
the pad-level dielectric layer is disposed directly on the first dielectric capping layer after the step of disposing the second semiconductor die in contact with the first semiconductor die.
6. The method of claim 5 , wherein the bonding surfaces of the second metallic bonding structures are formed between a first horizontal plane including a proximal horizontal surface of the first dielectric capping layer and a second horizontal plane including a distal horizontal surface of the first dielectric capping layer.
7. The method of claim 1 , wherein:
the providing the second semiconductor die further comprises forming a second dielectric capping layer on distal horizontal surfaces of the second metallic bonding structures and distal horizontal surfaces of the second metal interconnect structures, and forming openings through the second dielectric capping layer; and
the second metallic bonding structures comprise a respective protruding portion that protrudes into a respective opening through the second dielectric capping layer upon bonding the at least the first subset of the first metallic bonding structures to the at least the first subset of the second metallic bonding structures.
8. The method of claim 1 , wherein the metallic material comprises copper or copper alloy.
9. The method of claim 8 , wherein the annealing occurs at a temperature in a range from 250 degrees Celsius to 450 degrees Celsius.
10. The method of claim 1 , wherein the first dielectric capping layer has a thickness in a range from 10 nm to 50 nm.
11. A bonded assembly, comprising:
a first semiconductor die that comprises first semiconductor devices, first interconnect- level dielectric material layers embedding first metal interconnect structures and first metallic bonding structures, and a first dielectric capping layer contacting distal horizontal surfaces of the first metallic bonding structures and distal horizontal surfaces of a subset of the first metal interconnect structures; and
a second semiconductor die that comprises second semiconductor devices, second interconnect-level dielectric material layers embedding second metal interconnect structures, and second metallic bonding structures;
wherein a first subset of the second metallic bonding structures comprises a respective vertically protruding portion that protrudes through a respective opening in the first dielectric capping layer and contacting a bonding surface of a respective one of the first metallic bonding structures.
12. The bonded assembly of claim 11 , wherein:
the first dielectric capping layer has a thickness in a range from 10 nm to 50 nm; and
the first capping dielectric layer comprises a material selected from silicon carbide nitride, silicon nitride, silicon oxide, or a dielectric metal oxide.
13. The bonded assembly of claim 11 , wherein the subset of the first metal interconnect structures comprises first metal lines having a respective uniform width along a respective widthwise direction.
14. The bonded assembly of claim 11 , wherein the second metallic bonding structures comprise metal bonding pads embedded in a pad-level dielectric layer that is interposed between the first dielectric capping layer and the second interconnect-level dielectric material layers.
15. The bonded assembly of claim 14 , wherein:
the bonding surfaces of the first metallic bonding structures are located between a first horizontal plane including a proximal horizontal surface of the first dielectric capping layer and a second horizontal plane including a distal horizontal surface of the first dielectric capping layer; and
each of the second bonding structures comprises a horizontal surface segment that contacts the distal horizontal surface of the first dielectric capping layer and a vertical sidewall segment of the vertically protruding portion that contacts a sidewall of a respective opening in the first dielectric capping layer.
16. The bonded assembly of claim 14 , wherein a second subset of the first metallic bonding structures comprises a respective vertically protruding portion that protrudes through a respective opening in the first dielectric capping layer and contacting a horizontal dielectric surface of the second semiconductor die.
17. The bonded assembly of claim 11 , wherein the vertically protruding portion comprises copper or copper alloy.
18. The bonded assembly of claim 11 , wherein:
the second metallic bonding structures comprise second metal lines having a respective uniform width along a respective widthwise direction; and
the second semiconductor die comprises a second dielectric capping layer contacting distal horizontal surfaces of the second metallic bonding structures and distal horizontal surfaces of the second metal interconnect structures.
19. The bonded assembly of claim 18 , wherein the second metallic bonding structures comprise a respective vertically protruding portion that protrudes through a respective opening in the second dielectric capping layer and contacting a respective first metallic bonding structure.
20. The bonded assembly of claim 18 , wherein the bonding surfaces of the first metallic bonding structures are located between a first horizontal plane including a proximal horizontal surface of the first dielectric capping layer and a second horizontal plane including a proximal horizontal surface of the second dielectric capping layer.