Memory die containing through-memory-level via structure and methods for making the same
An alternating stack of insulating layers and spacer material layers is formed over a substrate. At least one dielectric material portion is formed over the substrate adjacent to the alternating stack. Memory stack structures are formed through the alternating stack. A trench extending through the alternating stack and a via cavity extending through the at least one dielectric material portion are formed using a same anisotropic etch process. The via cavity is deeper than the trench and the via cavity extends into an upper portion of the substrate. The sacrificial material layers are replaced with electrically conductive layers using the trench as a conduit for an etchant and a reactant. A trench fill structure is formed in the trench, and a via structure assembly is formed in the via cavity using simultaneous deposition of material portions. A bonding pad may be formed on the bottom surface of the via structure assembly.
1. A semiconductor structure comprising a memory die, wherein the memory die comprises:
a substrate comprising a top surface and an outer surface opposite to the top surface;
an alternating stack of insulating layers and electrically conductive layers located between the top surface of the substrate and metal interconnect structures that overlie the alternating stack;
memory stack structures extending through the alternating stack;
at least one dielectric material portion located adjacent to the alternating stack between the substrate and the metal interconnect structures; and
a via structure assembly vertically extending through the at least one dielectric material portion and through the substrate, the via structure assembly comprising a straight sidewall that extends from a first horizontal surface that contacts one of the metal interconnect structures and located at a first horizontal plane to a second horizontal surface that is located at a second horizontal plane and contacts a bonding pad located on the outer surface of the substrate within the second horizontal plane, wherein the via structure assembly comprises:
a tubular conductive portion extending from the first horizontal surface to the second horizontal surface;
a planar conductive portion contacting the bonding pad at the second horizontal surface; and
a dielectric via core located within the tubular conductive portion.
2. The semiconductor structure of claim 1 , wherein each of the memory stack structures comprises a vertical semiconductor channel and a memory film contacting the vertical semiconductor channel.
3. The semiconductor structure of claim 2 , wherein each of the memory stack structures is located entirely between, and is vertically spaced from each of, the first horizontal plane and the second horizontal plane.
4. The semiconductor structure of claim 2 , further comprising drain regions contacting a first end of a respective one of the vertical semiconductor channels.
5. The semiconductor structure of claim 4 , further comprising a semiconductor material layer electrically connected to a second end of each of the memory stack structures and located between the alternating stack and the substrate.
6. The semiconductor structure of claim 5 , further comprising a trench contact via structure vertically extending through the alternating stack and contacting a portion of the semiconductor material layer and comprising a same set of conductive materials as the via structure assembly.
7. The semiconductor structure of claim 6 , wherein:
the via structure assembly comprises an insulating via liner laterally surrounding the tubular conductive portion; and
a trench insulating spacer laterally surrounds the trench contact via structure, wherein the trench insulating spacer comprises a same dielectric material as the insulating via liner and has a same thickness as the insulating via liner.
8. The semiconductor structure of claim 7 , wherein:
the insulating via liner extends from the first horizontal plane to the second horizontal plane; and
the trench insulating spacer is located entirely between, and is vertical spaced from each of, the first horizontal plane and the second horizontal plane.
9. The semiconductor structure of claim 1 , wherein the via structure assembly comprises:
a doped semiconductor material layer including a vertical portion located within the tubular conductive portion; and
a metallic material layer including a vertical portion located within the tubular conductive portion and contacting the dielectric via core.
10. The semiconductor structure of claim 9 , wherein:
the metallic material layer contacts the one of the metal interconnect structures; and
the doped semiconductor material layer is vertically spaced from the first horizontal plane.
11. The semiconductor structure of claim 10 , wherein the via structure assembly comprises a first metallic nitride liner extending from the first horizontal plane to the second horizontal plane and contacting the bonding pad at the second horizontal plane and contacting and laterally surrounding the doped semiconductor material layer.
12. The semiconductor structure of claim 11 , wherein the via structure assembly comprises a second metallic nitride liner extending from the first horizontal plane toward the second horizontal plane, contacting and laterally surrounding the dielectric via core, and contacting and laterally surrounded by the doped semiconductor material layer.
13. The semiconductor structure of claim 12 , wherein the second metallic nitride liner directly contacts the bonding pad.
14. The semiconductor structure of claim 11 , further comprising a support die bonded to the memory die and comprising a peripheral circuitry configured to operate memory elements located within the memory stack structures.
15. A semiconductor structure comprising:
a memory die; and
a support die bonded to the memory die;
wherein the memory die comprises:
a substrate comprising a top surface and an outer surface opposite to the top surface;
an alternating stack of insulating layers and electrically conductive layers located between the top surface of the substrate and metal interconnect structures that overlie the alternating stack;
memory stack structures extending through the alternating stack;
at least one dielectric material portion located adjacent to the alternating stack between the substrate and the metal interconnect structures; and
a via structure assembly vertically extending through the at least one dielectric material portion and through the substrate, the via structure assembly comprising a straight sidewall that extends from a first horizontal surface that contacts one of the metal interconnect structures and located at a first horizontal plane to a second horizontal surface that is located at a second horizontal plane and contacts a bonding pad located on the outer surface of the substrate within the second horizontal plane, wherein the via structure assembly comprises:
a tubular conductive portion extending from the first horizontal surface to the second horizontal surface;
a planar conductive portion contacting the bonding pad at the second horizontal surface; and
a dielectric via core located within the tubular conductive portion; and
wherein the support die comprises a peripheral circuitry configured to operate memory elements located within the memory stack structures.
16. The semiconductor structure of claim 15 , wherein:
the memory die further comprises memory-die bonding pads formed on the metal interconnect structures; and
the support die further comprises support-die bonding pads bonded to the memory-die bonding pads.