Light-emitting device and method for manufacturing the same
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
1. A semiconductor device comprising:
a pixel portion comprising:
a first transistor;
a color filter layer; and
a partition over the color filter layer; and
a circuit portion comprising:
a second transistor,
wherein the first transistor comprises a first oxide semiconductor layer, a first source electrode layer, and a first drain electrode layer,
wherein the first oxide semiconductor layer comprises a first region, a second region, and a first channel formation region sandwiched between the first and second regions,
wherein the first region has a lower resistance than the first channel formation region,
wherein the second region has a lower resistance than the first channel formation region,
wherein the second transistor comprises a second oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises a third region, a fourth region, and a second channel formation region sandwiched between the third and fourth regions,
wherein the third region has a lower resistance than the second channel formation region,
wherein the fourth region has a lower resistance than the second channel formation region,
wherein a first insulating layer is positioned over the first source and drain electrode layers,
wherein the color filter layer is positioned over the first insulating layer and not overlapping the first channel formation region, and
wherein the partition comprises a region overlapping the first channel formation region.
2. The semiconductor device according to claim 1 , wherein the circuit portion is a protection circuit portion.
3. The semiconductor device according to claim 1 ,
wherein the second transistor comprises a second source electrode layer, a second drain electrode layer, and a gate electrode layer, and
wherein the second drain electrode layer is electrically connected to the gate electrode layer.
4. A semiconductor device comprising:
a pixel portion comprising:
a first transistor;
a color filter layer; and
a partition over the color filter layer; and
a circuit portion comprising:
a second transistor,
wherein the first transistor comprises a first oxide semiconductor layer comprising In, Ga, and Zn, a first source electrode layer, and a first drain electrode layer,
wherein the first oxide semiconductor layer comprises a first region, a second region, and a first channel formation region sandwiched between the first and second regions,
wherein the first region has a lower resistance than the first channel formation region,
wherein the second region has a lower resistance than the first channel formation region,
wherein the second transistor comprises a second oxide semiconductor layer comprising In, Ga, and Zn,
wherein the second oxide semiconductor layer comprises a third region, a fourth region, and a second channel formation region sandwiched between the third and fourth regions,
wherein the third region has a lower resistance than the second channel formation region,
wherein the fourth region has a lower resistance than the second channel formation region,
wherein a first insulating layer is positioned over the first source and drain electrode layers,
wherein the color filter layer is positioned over the first insulating layer and not overlapping the first channel formation region, and
wherein the partition comprises a region overlapping the first channel formation region.
5. The semiconductor device according to claim 4 , wherein the circuit portion is a protective circuit portion.
6. The semiconductor device according to claim 4 ,
wherein the second transistor comprises a second source electrode layer, a second drain electrode layer, and a gate electrode layer, and
wherein the second drain electrode layer is electrically connected to the gate electrode layer.