Cut last self-aligned litho-etch patterning
The present disclosure relates to a method of performing a semiconductor fabrication process. The method may be performed by forming a spacer material over an underlying layer. The spacer material has sidewalls defining a first trench. A cut material is formed over the spacer material and within the first trench. The cut material separates the trench into a pair of trench segments having ends separated by the cut material. The underlying layer is patterned according to the spacer material and the cut material.
1. A method of performing a semiconductor fabrication process, comprising:
forming a spacer material over an underlying layer, wherein the spacer material has sidewalls defining a first trench;
forming a cut material over the spacer material and within the first trench, wherein the cut material separates the first trench into a pair of trench segments having ends separated by the cut material; and
patterning the underlying layer according to the spacer material and the cut material.
2. The method of claim 1 , further comprising:
etching the spacer material to expose an upper surface of the underlying layer that is between the sidewalls of the spacer material.
3. The method of claim 1 , wherein the pair of trench segments are respectively defined by sidewalls of the spacer material and the cut material.
4. The method of claim 1 , further comprising:
forming a masking layer over the underlying layer;
forming the spacer material over the masking layer and along sidewalls of the masking layer;
etching the spacer material to expose an upper surface of the masking layer; and
etching the masking layer to expose the underlying layer.
5. The method of claim 4 , wherein etching the masking layer forms a second trench defined by sidewalls of the spacer material.
6. The method of claim 4 , wherein etching the masking layer forms a second pair of trench segments having ends separated by the spacer material.
7. The method of claim 4 , wherein the masking layer is etched after forming the cut material over the spacer material.
8. A method of performing a semiconductor fabrication process, comprising:
forming a spacer material over a masking layer, wherein the masking layer comprises a plurality of sidewalls defining trenches extending through the masking layer to an underlying layer;
forming a cut material over the spacer material;
etching the spacer material to define a first pair of trenches having ends separated by the cut material; and
etching the masking layer to define a second pair of trenches having ends separated by the spacer material.
9. The method of claim 8 , wherein the ends of the first pair of trenches are separated by a first distance measured along a first direction and the ends of the second pair of trenches are separated by a second distance measured along the first direction.
10. The method of claim 9 , wherein the first distance is substantially equal to the second distance.
11. The method of claim 8 , wherein the masking layer comprises first sidewalls defining a first trench, second sidewalls defining a second trench, third sidewalls defining a third trench, and fourth sidewalls defining a fourth trench extending between the second trench and the third trench.
12. The method of claim 11 , wherein the fourth sidewalls are perpendicular to the third sidewalls, as viewed from a top-view of the masking layer.
13. The method of claim 11 , wherein the spacer material has sidewalls disposed within the first trench, the second trench, and the third trench.
14. The method of claim 11 , wherein the spacer material has a first minimum thickness within the first trench and a second minimum thickness within the fourth trench, the second minimum thickness larger than the first minimum thickness.
15. The method of claim 11 , wherein the cut material is disposed within the first trench.
16. A method of performing a semiconductor fabrication process, comprising:
forming a masking layer having sidewalls defining a first trench separated from a second trench along a first direction;
forming a spacer material along the sidewalls of the masking layer;
forming a cut material within the first trench, wherein the cut material separates a first part of the first trench from a second part of the first trench along a second direction that is perpendicular to the first direction; and
performing an etching process to etch the spacer material after forming the cut material, wherein the cut material is along sidewalls of the spacer material after the etching process is completed.
17. The method of claim 16 , wherein the cut material has a first outermost sidewall facing the first part of the first trench and a second outermost sidewall facing the second part of the first trench.
18. The method of claim 16 , wherein the spacer material continuously extends from a first sidewall directly below the cut material to a second sidewall laterally outside of the cut material.
19. The method of claim 16 , wherein the etching process etches the spacer material to expose an upper surface of an underlying layer, and wherein the spacer material continuously extends along an unbroken path surrounding an exposed part of the upper surface of the underlying layer after the etching process is completed.
20. The method of claim 16 , wherein the spacer material has a first thickness directly below a center of the cut material and a second thickness directly below an outermost sidewall of the cut material, the second thickness greater than the first thickness.