Dry etching method, semiconductor device manufacturing method, and chamber cleaning method
Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.
1. A dry etching method, comprising:
a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and
a second step of evaporating the solid product by heating the solid product in an atmosphere of flow of at least one kind of inert gas selected from the group consisting of N, He, Ne, Ar, Kr and Xe at 0.1 kPa to 101.3 kPa or vacuum atmosphere of 0.1 Pa to 100 Pa at a heating temperature higher than the reaction temperature of the first step,
the specific metal element being one or more kinds of elements selected from the group consisting of Ru, Ta and Nb.
2. The dry etching method according to claim 1 ,
wherein the fluorine-containing interhalogen compound is one or more kinds of compounds selected from the group consisting of ClF, BrF, ClF 3 , BrF 3 , IF 3 , ClF 5 , BrF 5 , IF 5 and IF 7 .
3. The dry etching method according to claim 2 ,
wherein the fluorine-containing interhalogen compound is ClF 3 , IF 7 or a mixture thereof.
4. The dry etching method according to claim 1 ,
wherein the material containing the specific metal element includes one or more selected from the group consisting of a simple substance of Ru, a simple substance of Ta, a nitride of Ta and a simple substance of Nb.
5. The dry etching method according to claim 1 ,
wherein the reaction temperature of the first step is higher than or equal to 15° C. and lower than or equal to 50° C., and
wherein the heating temperature of the second step is higher than or equal to 50° C. and lower than or equal to 250° C.
6. The dry etching method according to claim 1 ,
wherein the material containing the specific metal element includes one or more selected from the group consisting of a simple substance of Ru, a simple substance of Ta, a nitride of Ta and a simple substance of Nb,
wherein the reaction temperature of the first step is higher than or equal to 0° C. and lower than or equal to 50° C., and
wherein the heating temperature of the second step is 5° C. or more higher than the reaction temperature of the first step.
7. The dry etching method according to claim 1 ,
wherein the material is in a thin-film shape.
8. The dry etching method according to claim 1 ,
wherein the dry etching method is applied to an etching target containing both of the material containing the specific metal element and a material containing silicon oxide, silicon nitride or titanium nitride, whereby the material containing the specific metal element is etched selectively relative to the material containing silicon oxide, silicon nitride or titanium nitride.
9. A semiconductor device manufacturing method, comprising:
forming a layer of a material containing a specific metal element on a semiconductor substrate;
forming a mask with a predetermined pattern on the layer of the material containing the specific metal element; and
removing a part of the layer of the material containing the specific metal element from the semiconductor substrate by the dry etching method according to claim 1 and thereby transferring the pattern to the layer of the material containing the specific metal element.
10. The semiconductor device manufacturing method according to claim 9 ,
wherein the semiconductor substrate is a silicon substrate having a silicon oxide layer on a surface thereof, and
wherein the layer containing the specific metal element is formed on the silicon oxide layer.
11. The dry etching method according to claim 1 ,
wherein the specific metal element is at least one element selected from the group consisting of Ru and Nb.
12. The dry etching method according to claim 11 ,
wherein the material containing the specific metal element is a simple substance of Ru or a simple substance of Nb.
13. A chamber cleaning method, comprising:
a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a chamber deposit containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and
a second step of evaporating the solid product by heating the solid product in an atmosphere of flow of at least one kind of inert gas selected from the group consisting of N, He, Ne, Ar, Kr and Xe at 0.1 kPa to 101.3 kPa or vacuum atmosphere of 0.1 Pa to 100 Pa at a temperature higher than the reaction temperature of the first step, thereby removing the chamber deposit from an inner surface of the chamber.
14. The chamber cleaning method according to claim 13 ,
wherein the specific metal element is at least one element selected from the group consisting of Ru and Nb.
15. The chamber cleaning method according to claim 14 ,
wherein the material containing the specific metal element is a simple substance of Ru or a simple substance of Nb.
16. A dry etching method, comprising:
a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature ranging from 15° C. to 50° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and
a second step of evaporating the solid product by heating the solid product, at a heating temperature ranging from 50° C. to 250° C. and being higher than the reaction temperature of the first step, in an atmosphere of flow of at least one kind of inert gas selected from the group consisting of N 2 , He, Ne, Ar, Kr and Xe at 0.1 kPa to 101.3 kPa or vacuum atmosphere of 0.1 Pa to 100 Pa,
the specific metal element being one or more kinds of elements selected from the group consisting of Ru, Ta and Nb.
17. The dry etching method according to claim 16 ,
wherein the specific metal element is at least one element selected from the group consisting of Ru and Nb.
18. The dry etching method according to claim 17 , wherein the material containing the specific metal element is a simple substance of Ru or a simple substance of Nb.