Image sensors and methods of forming the same

1. An image sensor comprising:

a substrate including an active region and an edge region in a plan view, the substrate having a first surface and a second surface opposite to the first surface;

micro-lenses on the first surface of the active region of the substrate, wherein the micro-lenses are not disposed on the edge region of the substrate;

an anti-reflection layer disposed on the first surface of the active region and the edge region of the substrate;

color filters between the anti-reflection layer and the micro-lenses;

a grid pattern between adjacent two of the color filters;

a plurality of photoelectric conversion parts between the first and second surfaces of the substrate;

a gate pattern on the second surface of the substrate;

an interconnection structure provided on the active region and the edge region of the substrate and covering the gate pattern, the interconnection structure comprising insulating layers stacked on the second surface of the substrate and interconnections in the insulating layers;

first isolation patterns between the plurality of photoelectric conversion parts in the active region of the substrate; and

second isolation patterns in the edge region of the substrate,

wherein a depth of the first isolation patterns is different from a depth of the second isolation patterns,

wherein adjacent two of the first isolation patterns are separated by a first distance that is less than a second distance separating adjacent two of the second isolation patterns, and

wherein the first isolation patterns include a different material from the second isolation patterns.

2. The image sensor of claim 1 , wherein the first distance is less than the second distance.

3. The image sensor of claim 1 , wherein a shape of the first isolation patterns is different from a shape of the second isolation patterns.

4. The image sensor of claim 1 , further comprising a metal layer on the first surface of the edge region of the substrate,

wherein the metal layer is not disposed on the active region of the substrate.

5. The image sensor of claim 1 , wherein the first isolation patterns include silicon oxide, and

wherein the second isolation patterns include silicon nitride or silicon oxynitride.

6. The image sensor of claim 1 , wherein the second isolation patterns penetrate the first surface of the substrate.

7. The image sensor of claim 1 , wherein the depth of the first isolation patterns ranges from 0.3 μm to 6 μm.

8. The image sensor of claim 1 , wherein a width of the first isolation patterns is different from a width of the second isolation patterns.

9. The image sensor of claim 1 , further comprising a shallow isolation layer in the active region of the substrate,

wherein a depth of the shallow isolation layer is less than the depth of the first isolation patterns, and

wherein the shallow isolation layer is adjacent to the second surface of the substrate.

10. The image sensor of claim 1 , wherein each of the first isolation patterns includes a lower portion, a middle portion and an upper portion,

wherein a minimum width of the middle portion is greater than a minimum width of the lower portion.

11. An image sensor comprising:

a substrate including an active region and an edge region in a plan view, the substrate having a first surface and a second surface opposite to the first surface;

a plurality of photoelectric conversion parts between the first and second surfaces in the active region of the substrate;

first isolation patterns between the plurality of photoelectric conversion parts in the active region of the substrate;

second isolation patterns in the edge region of the substrate; and

a micro-lens array on the first surface of the active region of the substrate,

wherein the micro-lens array is not disposed on the edge region of the substrate,

wherein a shape of the first isolation patterns is different from a shape of the second isolation patterns, and

wherein adjacent two of the first isolation patterns are separated by a first distance that is less than a second distance separating adjacent two of the second isolation patterns.

12. The image sensor of claim 11 , wherein the substrate further has a trench recessed from the first surface of the substrate,

wherein the first isolation pattern is provided in the trench.

13. The image sensor of claim 11 , further comprising a metal layer on the first surface of the edge region of the substrate,

wherein the metal layer is not vertically overlap with the plurality of photoelectric conversion parts and the first isolation patterns.

14. The image sensor of claim 13 , wherein the metal layer is spaced from the micro-lens array.

15. The image sensor of claim 11 , further comprising:

an interconnection structure provided on the active region and the edge region of the substrate; and

a gate pattern between the second surface of the substrate and the interconnection structure,

wherein the interconnection structure comprises:

insulating layers stacked on the second surface of the substrate; and

interconnections in the insulating layers.

16. The image sensor of claim 11 , further comprising:

an anti-reflection layer disposed on the first surface of the substrate;

color filters on the anti-reflection layer; and

a grid pattern between adjacent two of the color filter.

17. The image sensor of claim 16 , wherein the color filters are not provided on the edge region of the substrate, and

wherein the anti-reflection layer is provided on the active region and the edge region of the substrate.

18. An image sensor comprising:

a substrate including an active region and an edge region in a plan view;

a plurality of photoelectric conversion parts provided between a first surface of the substrate and a second surface of the substrate in the active region of the substrate;

a pixel isolation pattern between the plurality of photoelectric conversion parts in the active region of the substrate;

a device isolation pattern in the edge region of the substrate;

micro-lenses provided on the first surface of the active region of the substrate and spaced apart from the edge region of the substrate;

color filters between the substrate and the micro-lenses; and

a grid pattern between adjacent two of the color filters, the adjacent two of the color filters spaced apart by the grid pattern,

wherein a depth of the pixel isolation pattern is different from a depth of the device isolation pattern, and

wherein the pixel isolation pattern includes a different material from the device isolation pattern.

19. The image sensor of claim 18 , wherein the pixel isolation pattern includes silicon oxide, silicon nitride, or silicon oxynitride.

20. The image sensor of claim 18 , further comprising:

an anti-reflection layer disposed on the color filters;

an interconnection structure provided on the second surface of the substrate and comprising stacked insulating layers and an interconnection; and

a gate pattern between the second surface of the substrate and the interconnection structure,

wherein the color filters are not vertically overlapped with the device isolation pattern.