Materials and components in phase change memory devices
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.
1. A memory cell comprising:
a memory element between a first conductive line and a second conductive line;
a select device between the memory element and the first conductive line;
a first electrode between the select device and the first conductive line, the first electrode including amorphous carbon doped with silicon;
a second electrode between the memory element and the second conductive line, the second electrode including amorphous carbon doped with silicon; and
a third electrode between the memory element and the select device, the third electrode including amorphous carbon doped with silicon.
2. The memory cell of claim 1 , wherein:
one or more of the first electrode and the second electrode include up to 20 atomic percent (at %) silicon.
3. The memory cell of claim 1 , wherein:
one or more of the first electrode and the second electrode include silicon in a range of 5-10 atomic percent (at %).
4. The memory cell of claim 1 , wherein:
one or more of the first electrode and the second electrode include approximately 3 atomic percent (at %) silicon.
5. The memory cell of claim 1 , wherein:
one or more of the first electrode and the second electrode include approximately 7 atomic percent (at %) silicon.
6. The memory cell of claim 1 , wherein:
the memory element includes a chalcogenide material.
7. The memory cell of claim 6 , wherein:
the chalcogenide material includes germanium (Ge), antimony (Sb), and tellurium (Te).
8. The memory cell of claim 1 , wherein:
the memory element includes a phase change material.
9. The memory cell of claim 1 , wherein:
the select device includes a chalcogenide material.
10. The memory cell of claim 1 , wherein:
the select device includes a different material than the memory element.
11. The memory cell of claim 1 , wherein:
the first conductive line comprises a wordline; and
the second conductive line comprises a bitline.
12. A memory device comprising:
a crosspoint array of memory cells, each of the memory cells comprising:
a first chalcogenide material between a first conductive line and a second conductive line;
a second chalcogenide material between the first chalcogenide material and the first conductive line;
a first electrode material between the first chalcogenide material and the first conductive line, the first electrode material including amorphous carbon doped with silicon;
a second electrode material between the first chalcogenide material and the second conductive line, the second electrode material including amorphous carbon doped with silicon; and
a third electrode material between the first chalcogenide material and the second chalcogenide material, the third electrode material including amorphous carbon doped with silicon.
13. The memory device of claim 12 , wherein:
one or more of the first electrode material and the second electrode material include up to 20 atomic percent (at %) silicon.
14. The memory device of claim 12 , wherein:
one or more of the first electrode material and the second electrode material include silicon in a range of 5-10 atomic percent (at %).
15. The memory device of claim 12 , wherein:
one or more of the first electrode material and the second electrode material include approximately 3 atomic percent (at %) silicon.
16. A memory device comprising:
an array of memory cells, each of the memory cells comprising:
a phase change material between a first conductive line and a second conductive line;
a first electrode material between the phase change material and the first conductive line, the first electrode material including amorphous carbon doped with silicon; and
a second electrode material between the phase change material and the second conductive line, the second electrode material including amorphous carbon doped with silicon.
17. The memory device of claim 16 , wherein each of the memory cells further comprises:
a select material between the phase change material and the first conductive line; and
a third electrode material between the phase change material and the select material, the third electrode material including amorphous carbon doped with silicon.