Conformal titanium silicon nitride-based thin films and methods of forming same
The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a diffusion barrier comprising TiSiN comprises exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.
1. A method of forming a diffusion barrier comprising TiSiN, the method comprising:
exposing a semiconductor substrate to one or more first deposition phases alternating with and without overlapping with one or more second deposition phases,
wherein exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor, and
wherein exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.
2. The method of claim 1 , wherein exposing the semiconductor substrate to the first deposition phases comprises exposing the semiconductor substrate to the N precursor as a last precursor of each of the first deposition phases.
3. The method of claim 2 , wherein exposing the semiconductor substrate to the second deposition phases comprises exposing the semiconductor substrate to the Ti precursor as a first precursor of each of the second deposition phases.
4. The method of claim 3 , wherein exposing the semiconductor substrate to the Ti precursor as the first precursor of each of the second deposition phases immediately follows exposing the semiconductor substrate to the N precursor as the last precursor of an immediately preceding first deposition phase without an intervening exposure to any other precursor.
5. The method of claim 4 , wherein exposing the semiconductor to one or more of the Ti precursor, the Si precursor and the N precursor during the one or more second deposition phases comprises under-saturating a surface of the semiconductor substrate.
6. The method of claim 1 , wherein the method is carried out without aid of a plasma.
7. The method of claim 6 , wherein exposing the semiconductor substrate to the one or more first deposition phases and the one or more second deposition phases comprises exposing at a pressure in a reaction chamber greater than 1 torr.
8. The method of claim 1 , wherein a ratio of exposure times of exposing the semiconductor substrate to the Si precursor and exposing the semiconductor substrate to the Ti precursor in the second deposition phases is between 2 and 130.
9. The method of claim 1 , wherein a ratio of exposure times of exposing the semiconductor substrate to the Ti precursor in the second deposition phases and exposing the semiconductor substrate to the Ti precursor in the first deposition phases is between 3 and 34.
10. The method of claim 1 , wherein a ratio of exposure times of exposing the semiconductor substrate to the N precursor in the second deposition phases and exposing the semiconductor substrate to the N precursor in the first deposition phases is between 5 and 50.
11. A method of forming a diffusion barrier comprising TiSiN, the method comprising:
exposing a semiconductor substrate to one or more first deposition phases alternating with and without overlapping with one or more second deposition phases,
wherein exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor, and
wherein exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.
12. The method of claim 11 , wherein the method is carried out without aid of a plasma.
13. The method of claim 12 , wherein exposing the semiconductor substrate to the one or more first deposition phases and the one or more second deposition phases comprises exposing at a pressure in a reaction chamber greater than 1 torr.
14. The method of claim 11 , wherein exposing the semiconductor substrate to the first deposition phases comprises exposing the semiconductor substrate to the N precursor as a last precursor of each of the first deposition phases.
15. The method of claim 14 , wherein exposing the semiconductor substrate to the second deposition phases comprises exposing the semiconductor substrate to the Ti precursor as a first precursor of each of the second deposition phases.
16. The method of claim 15 , wherein exposing the semiconductor substrate to the Ti precursor as the first precursor of each of the second deposition phases immediately follows exposing the semiconductor substrate to the N precursor as the last precursor of an immediately preceding first deposition phase without an intervening exposure to any other precursor.
17. The method of claim 16 , wherein exposing the semiconductor to one or more of the Ti precursor, the Si precursor and the N precursor during the one or more second deposition phases comprises under-saturating a surface of the semiconductor substrate.
18. The method of claim 17 , wherein exposing the semiconductor to one or more of the Ti precursor, the Si precursor and the N precursor during the one or more second deposition phases comprises under-saturating a surface of the semiconductor substrate.
19. The method of claim 11 , wherein the semiconductor substrate comprises an opening having an aspect ratio exceeding 50, and wherein forming the diffusion barrier comprises lining surfaces of the opening such that a ratio of a thicknesses of the diffusion barrier formed on lower 25% of a height of the opening and upper 25% of the height of the opening exceeds 0.9.
20. The method of claim 11 , wherein the diffusion barrier formed using the method has a resistivity of 2000 μΩ·cm or lower.
21. The method of claim 11 , wherein the diffusion barrier formed using the method has a resistivity that is lower by at least 500 μΩ·cm compared to a diffusion barrier formed using a same method except for exposing the semiconductor substrate to the Ti precursor as part of the one or more second deposition phases.
22. The method of claim 11 , wherein an exposure time of exposing the semiconductor to the Si precursor exceeds 3 sec., and an exposure time of exposing the semiconductor to the Ti precursor in the second deposition phases is shorter than 2 sec.
23. The method of claim 11 , wherein exposing the semiconductor substrate to the one or more first deposition phases and the one or more second deposition phases comprises exposing at a pressure in a reaction chamber greater than 1 torr.