Method for manufacturing sputtering target, method for forming oxide film, and transistor
A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
1. A method for manufacturing a semiconductor film, comprising the steps of:
forming a first oxide film by using a first sputtering target comprising In, M1 and Zn; and
forming a second oxide film by using a second sputtering target comprising In, M2 and Zn over the first oxide film,
wherein M1 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein M2 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein the second oxide film comprises a c-axis aligned crystal part, and
wherein an atomic ratio of metal elements of the second sputtering target satisfies M2>In and Zn>M2.
2. The method for manufacturing a semiconductor film according to claim 1 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:M1:Zn=1:1:1.
3. The method for manufacturing a semiconductor film according to claim 1 , wherein the c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.
4. The method for manufacturing a semiconductor film according to claim 1 ,
wherein a direction of an a-axis of a first region of the second oxide film is different from a direction of an a-axis of a second region of the second oxide film, and
wherein a direction of a b-axis of the first region of the second oxide film is different from a direction of a b-axis of the second region of the second oxide film.
5. The method for manufacturing a semiconductor film according to claim 1 , wherein an electron diffraction pattern of the second oxide film shows a plurality of bright spots.
6. The method for manufacturing a semiconductor film according to claim 1 ,
wherein an atomic ratio of M1 to In and an atomic ratio of Zn to In in the first oxide film are lower than those in the first sputtering target, and
wherein an atomic ratio of M2 to In and an atomic ratio of Zn to In in the second oxide film are lower than those in the second sputtering target.
7. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a first oxide film by using a first sputtering target comprising In, M1 and Zn over the gate electrode;
forming a second oxide film by using a second sputtering target comprising In, M2 and Zn over the first oxide film; and
forming a source electrode and a drain electrode over the second oxide film,
wherein M1 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein M2 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein the second oxide film comprises a c-axis aligned crystal part, and
wherein an atomic ratio of metal elements of the second sputtering target satisfies M2>In and Zn>M2.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:M1:Zn=1:1:1.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein the c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.
10. The method for manufacturing a semiconductor device according to claim 7 ,
wherein a direction of an a-axis of a first region of the second oxide film is different from a direction of an a-axis of a second region of the second oxide film, and
wherein a direction of a b-axis of the first region of the second oxide film is different from a direction of a b-axis of the second region of the second oxide film.
11. The method for manufacturing a semiconductor device according to claim 7 , wherein an electron diffraction pattern of the second oxide film shows a plurality of bright spots.
12. The method for manufacturing a semiconductor device according to claim 7 ,
wherein an atomic ratio of M1 to In and an atomic ratio of Zn to In in the first oxide film are lower than those in the first sputtering target, and
wherein an atomic ratio of M1 to In and an atomic ratio of Zn to In in the second oxide film are lower than those in the second sputtering target.
13. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode;
forming a first oxide film by using a first sputtering target comprising In, M1 and Zn over the gate electrode;
forming a second oxide film by using a second sputtering target comprising In, M2 and Zn over the first oxide film; and
forming a source electrode and a drain electrode over the second oxide film,
wherein M1 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein M2 represents an element selected from the group consisting of Al, Ti, Ga, Y, Zr, La, Cs, Nd and Hf,
wherein the second oxide film comprises a c-axis aligned crystal part,
wherein an atomic ratio of metal elements of the first sputtering target satisfies In≥Ga and Zn≥Ga, and
wherein an atomic ratio of metal elements of the second sputtering target satisfies Ga>In and Zn>Ga.
14. The method for manufacturing a semiconductor device according to claim 13 , wherein an atomic ratio of metal elements of the first sputtering target satisfies In:M1:Zn=1:1:1.
15. The method for manufacturing a semiconductor device according to claim 13 , wherein the c-axis of the second oxide film is aligned in a direction parallel to a normal vector of a surface where the second oxide film is formed or a top surface of the second oxide film.
16. The method for manufacturing a semiconductor device according to claim 13 ,
wherein a direction of an a-axis of a first region of the second oxide film is different from a direction of an a-axis of a second region of the second oxide film, and
wherein a direction of a b-axis of the first region of the second oxide film is different from a direction of a b-axis of the second region of the second oxide film.
17. The method for manufacturing a semiconductor device according to claim 13 ,
wherein the second oxide film comprises a first crystal part and a second crystal part,
wherein a direction of a c-axis of the first crystal part is parallel to a direction of a c-axis of the second crystal part,
wherein a direction of an a-axis of the first crystal part is different from a direction of an a-axis of the second crystal part, and
wherein a direction of a b-axis of the first crystal part is different from a direction of a b-axis of the second crystal part.
18. The method for manufacturing a semiconductor device according to claim 13 ,
wherein an atomic ratio of M1 to In and an atomic ratio of Zn to In in the first oxide film are lower than those in the first sputtering target, and
wherein an atomic ratio of M2 to In and an atomic ratio of Zn to In in the second oxide film are lower than those in the second sputtering target.
19. The method for manufacturing a semiconductor device according to claim 13 , wherein a size of the c-axis aligned crystal part in the second oxide film is greater than or equal to 1 nm and less than or equal to 100 nm.