Apparatus for transmitting and receiving a signal, a method of operating the same, a memory device, and a method of operating the memory device

1. A memory device, comprising:

a first on-die termination circuit connected to a data pin for transmitting or receiving a data signal and, when enabled, the first on-die termination circuit is configured to provide a first termination resistance to a signal line connected to the data pin;

a second on-die termination circuit connected to a read data strobe pin for transmitting or receiving a read data strobe signal and, when enabled, the second on-die termination circuit is configured to provide a second termination resistance to a signal line connected to the read data strobe pin; and

an on-die termination control circuit configured to independently control an enable timing or a disable timing of the first on-die termination circuit and an enable timing or a disable timing of the second on-die termination circuit,

wherein the memory device receives the data signal from outside the memory device through the data pin when the first on-die termination circuit is enabled and the second on-die termination circuit is disabled.

2. The memory device of claim 1 ,

wherein the on-die termination control circuit

is configured to disable the second on-die termination circuit after a first time period elapses since the memory device received a data read command and disable the first on-die termination circuit after a second time period elapses since the memory device received the data read command, the second time period being greater than the first time period.

3. The memory device of claim 2 ,

wherein the on-die termination control circuit

is configured to enable the first on-die termination circuit after a third time period elapses since the memory device received the data read command and enable the second on-die termination circuit after a fourth time period elapses since the memory device received the data read command, the fourth time period being greater than the third time period.

4. The memory device of claim 1 ,

wherein the memory device transmits the data signal outside the memory device through the data pin and transmits the read data strobe signal outside the memory device through the read data strobe pin, before the first on-die termination circuit is enabled after the first on-die termination circuit is disabled.

5. The memory device of claim 1 ,

further comprising a data clock signal pin for receiving a data clock signal from outside the memory device,

wherein the read data strobe pin is configured to output, as the read data strobe signal, a signal synchronized with the data clock signal in a read operation of the memory device.

6. The memory device of claim 1 ,

wherein the memory device provides an indicator signal outside the memory device through a mode register, the indicator signal indicating that the memory device has the ability to independently control the first on-die termination circuit and the second on-die termination circuit.

7. A method of operating a memory device, which transmits or receives a data signal through a data pin and transmits a read data strobe signal through a read data strobe pin, the method comprising:

receiving a data read command from outside the memory device;

disabling a first on-die termination circuit and a second on-die termination circuit, the first on-die termination circuit being connected to the data pin and, when enabled, the first on-die termination circuit provides a first termination resistance to a signal line connected to the data pin, and the second on-die termination circuit being connected to the read data strobe pin and, when enabled, the second on-die termination circuit provides a second termination resistance to a signal line connected to the read data strobe pin;

enabling the first on-die termination circuit;

enabling the second on-die termination circuit a period of time after the first on-die termination circuit is enabled; and

receiving the data signal from outside the memory device through the data pin when the first on-die termination circuit is enabled and the second on-die termination circuit is disabled.

8. The method of claim 7 ,

wherein the disabling of the first on-die termination circuit and the second on-die termination circuit comprises:

disabling the second on-die termination circuit after a first time period elapses from when the data read command is received; and

disabling the first on-die termination circuit after a second time period elapses from when the data read command is received, the second time period being greater than the first time period.

9. The method of claim 7 , further comprising

transmitting the data signal outside the memory device through the data pin and transmitting the read data strobe signal outside the memory device through the read data strobe pin, before the first on-die termination circuit is enabled after the first on-die termination circuit is disabled.

10. The method of claim 7 , further comprising

providing an indicator signal outside the memory device through a mode register, the indicator signal indicating that the memory device has the ability to independently control the first on-die termination circuit and the second on-die termination circuit.

11. A method of operating a memory device, the method comprising:

receiving a data read command;

disabling a second on-die termination circuit after a first time period and disabling a first on-die termination circuit after a second time period, wherein the second time period is greater than the first time period, the first time period and the second time period starting when the data read command is received;

enabling the first on-die termination circuit after a third time period and enabling the second on-die termination circuit after a fourth time period, wherein the fourth time period is greater than the third time period, the third time period and the fourth time period starting when the data read command is received; and

receiving data through a data pin connected to the first on-die termination circuit when the first on-die termination circuit is enabled and the second on-die termination circuit is disabled.

12. The method of claim 11 , wherein a time between when the first time period ends and the second time period ends corresponds to a preamble time.

13. The method of claim 11 , wherein a time between when the third time period ends and the fourth time period ends corresponds to a postamble time.

14. The method of claim 11 , wherein the first on-die termination circuit is enabled and disabled in response to a first control signal and the second on-die termination circuit is enabled and disabled in response to a second control signal.