Solid-state imaging device and electronic apparatus
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
1. A light detecting device comprising:
a semiconductor substrate having a first side as a light-receiving side;
a trench region disposed in the semiconductor substrate at the first side;
a first region of the semiconductor substrate comprising at least a portion of a first photodiode, wherein:
the first region is surrounded by the trench region at the first side in a plan view, and
the first region corresponds with a first color filter in a depth direction of the semiconductor substrate; and
a second region of the semiconductor substrate comprising at least a portion of a second photodiode, wherein:
the second region is surrounded by the trench region at the first side in the plan view,
the second region corresponds with a second color filter in the depth direction of the semiconductor substrate, and
a first area of the first region in the plan view at the first side is larger than a second area of the second region in the plan view at the first side.
2. The light detecting device according to claim 1 , wherein the trench region surrounds the first region in a first rectangular shape at the first side in the plan view, and the trench region surrounds the second region in a second rectangular shape at the first side in the plan view.
3. The light detecting device according to claim 2 , wherein a first side of the first rectangular shape is a same length as a first side of the second rectangular shape in the plan view, and a second side of the first rectangular shape is a different length than a second side of the second rectangular shape in the plan view.
4. The light detecting device according to claim 2 , wherein a side of the first rectangular shape is a same length as a side of the second rectangular shape in the plan view, and a first area of the first rectangular shape is larger than a second area of the second rectangular shape in the plan view.
5. The light detecting device according to claim 2 , wherein a first side of the first rectangular shape is a different length than a first side of the second rectangular shape in the plan view, and wherein the first rectangular shape and the second rectangular shape are each approximately a square shape.
6. The light detecting device according to claim 1 , further comprising a division area disposed between the first region and the second region in the semiconductor substrate.
7. The light detecting device according to claim 6 , wherein the division area is disposed at least on a side of the semiconductor substrate that is opposite to the light-receiving side of the semiconductor substrate in a cross-section view.
8. The light detecting device according to claim 7 , wherein the division area comprises p-type impurities.
9. The light detecting device according to claim 7 , wherein the division area is in contact with the trench region.
10. The light detecting device according to claim 1 , wherein a first insulating film is disposed on the semiconductor substrate, and a second insulating film is disposed on the first insulating film.
11. The light detecting device according to claim 10 , wherein the first insulating film and the second insulating film are disposed in the trench region.
12. The light detecting device according to claim 1 , wherein a light-shielding unit is disposed on the semiconductor substrate.
13. The light detecting device according to claim 1 , wherein a first on-chip lens is disposed at a light-receiving side of the first color filter in a cross-section view, and wherein a second on-chip lens is disposed at a light-receiving side of the second color filter in the cross-section view.
14. The light detecting device according to claim 1 , wherein the first color filter corresponds to a first color and the first color filter is disposed at the first side of the semiconductor substrate.
15. The light detecting device according to claim 14 , wherein the second color filter corresponds to a second color and the second color filter is disposed at the first side of the semiconductor substrate.
16. The light detecting device according to claim 1 , wherein the first color filter is configured to filter light of a different wavelength range than the second color filter.
17. An electronic apparatus comprising:
a semiconductor substrate having a first side as a light-receiving side;
a trench region disposed in the semiconductor substrate at the first side;
a first region of the semiconductor substrate comprising at least a portion of a first photodiode, wherein:
the first region is surrounded by the trench region at the first side in a plan view, and
the first region corresponds with a first color filter in a depth direction of the semiconductor substrate; and
a second region of the semiconductor substrate comprising at least a portion of a second photodiode, wherein:
the second region is surrounded by the trench region at the first side in the plan view,
the second region corresponds with a second color filter in the depth direction of the semiconductor substrate, and
a first area of the first region in the plan view at the first side is larger than a second area of the second region in the plan view at the first side.
18. The electronic apparatus according to claim 17 , wherein the trench region surrounds the first region in a first rectangular shape at the first side in the plan view, and the trench region surrounds the second region in a second rectangular shape at the first side in the plan view.
19. The electronic apparatus according to claim 18 , wherein a first side of the first rectangular shape is a same length as a first side of the second rectangular shape in the plan view, and a second side of the first rectangular shape is a different length than a second side of the second rectangular shape in the plan view.
20. The electronic apparatus according to claim 18 , wherein a side of the first rectangular shape is a same length as a side of the second rectangular shape in the plan view, and a first area of the first rectangular shape is larger than a second area of the second rectangular shape in the plan view.