Method of manufacturing magnetic tunnel junction and magnetic tunnel junction
Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.
1. A method of manufacturing a magnetic tunnel junction, comprising:
a first step of etching a stacked film including a first magnetic layer, a second magnetic layer, and a barrier layer disposed between the first magnetic layer and the second magnetic layer by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and
a second step of introducing an organic acid gas which is an n-valent acid and a precursor gas whose valence of a corresponding metal element is m into a chamber for forming the magnetic tunnel junction, to form a first protective film on side walls of the magnetic tunnel junction after the first step, wherein
n and m are natural numbers, and
a molar ratio of the precursor gas to the organic acid gas is greater than or equal to n/m.
2. The method of manufacturing a magnetic tunnel junction according to claim 1 , further comprising:
a third step of forming, by a plasma CVD method, a second protective film on the magnetic tunnel junction on which the first protective film is formed.