Magnetic tunnel junction device and method of forming the same
Improved methods of patterning magnetic tunnel junctions (MTJs) for magnetoresistive random-access memory (MRAM) and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a bottom electrode layer over a semiconductor substrate; depositing an MTJ film stack over the bottom electrode layer; depositing a top electrode layer over the MTJ film stack; patterning the top electrode layer; performing a first etch process to pattern the MTJ film stack; performing a first trim process on the MTJ film stack; after performing the first trim process, depositing a first spacer layer over the MTJ film stack; and after depositing the first spacer layer, performing a second etch process to pattern the first spacer layer, the MTJ film stack, and the bottom electrode layer to form an MRAM cell.
1 . A semiconductor device comprising:
a first conductive feature on a semiconductor substrate;
a bottom electrode on the first conductive feature;
a magnetic tunnel junction (MTJ) stack on the bottom electrode, the MTJ stack comprising:
a reference layer on the bottom electrode;
a tunnel barrier layer on the reference layer; and
a free layer on the reference layer;
a first spacer in contact with a side surface of the free layer and a side surface of the tunnel barrier layer, wherein a bottom surface of the first spacer is level with a bottom surface of the tunnel barrier layer;
a second spacer adjacent the first spacer and has a bottom surface nearer the semiconductor substrate than a bottom surface of the first spacer; and
a top electrode on the MTJ stack.
2 . The semiconductor device of claim 1 , further comprising a dielectric layer in contact with a side surface of the first spacer and a side surface of the reference layer.
3 . The semiconductor device of claim 2 , wherein the dielectric layer comprises aluminum oxide.
4 . The semiconductor device of claim 1 , wherein the MTJ stack comprises a step between the reference layer and the tunnel barrier layer.
5 . The semiconductor device of claim 1 , wherein a bottom surface of the second spacer is level with the bottom surface of the reference layer.
6 . The semiconductor device of claim 1 , wherein the second spacer is in contact with a side surface of the first spacer and a side surface of the reference layer.
7 . A semiconductor device comprising:
a first conductive feature on a semiconductor substrate;
a bottom electrode on the first conductive feature;
a magnetic tunnel junction (MTJ) on the bottom electrode;
a first spacer on the MTJ, wherein the first spacer comprises a first spacer layer and a second spacer layer, wherein the first spacer layer is in contact with a side surface of the MTJ, wherein the second spacer layer is in contact with the bottom electrode;
a top electrode on the MTJ; and
a first dielectric layer on the bottom electrode, the MTJ, the first spacer, and the top electrode, wherein the first dielectric layer is in contact with side surfaces of the MTJ and the first spacer.
8 . The semiconductor device of claim 7 , wherein the MTJ comprises a free layer, a tunnel barrier layer, and a reference layer, wherein the first spacer is in contact with a side surface of the free layer and a side surface of the tunnel barrier layer, and wherein the first dielectric layer is in contact with a side surface of the reference layer.
9 . The semiconductor device of claim 7 , wherein the MTJ comprises a reference layer, a tunnel barrier layer, and a free layer, wherein the first spacer is in contact with a side surface of the reference layer and a side surface of the tunnel barrier layer, and wherein the first dielectric layer is in contact with a side surface of the free layer.
10 . The semiconductor device of claim 7 , wherein the first dielectric layer comprises aluminum oxide.
11 . The semiconductor device of claim 7 , wherein the first spacer is in contact with a side surface of the top electrode, and wherein a top surface of the first spacer is below a top surface of the top electrode.
12 . The semiconductor device of claim 7 , wherein the MTJ comprises a stepped structure adjacent the first spacer.
13 . The semiconductor device of claim 7 , wherein the MTJ comprises a reference layer, a tunnel barrier layer, and a free layer, wherein the first spacer layer is in contact with a side surface of the free layer and a side surface of the tunnel barrier layer, and wherein the second spacer layer is in contact with a side surface of the reference layer.
14 . The semiconductor device of claim 13 , wherein the MTJ comprises a first step adjacent the first spacer layer and a second step adjacent the second spacer layer.
15 . A semiconductor device comprising:
a bottom electrode on a substrate;
a magnetic tunnel junction (MTJ) stack on the bottom electrode, the MTJ stack comprising a reference layer, a tunnel barrier layer, and a free layer;
a first spacer layer in contact with side surfaces of the free layer and the tunnel barrier layer;
a second spacer layer in contact with a side surface of the reference layer, wherein the second spacer layer is in contact with the bottom electrode; and
a top electrode on the MTJ stack;
wherein the MTJ stack comprises a stepped structure, with a first step adjacent the first spacer layer and a second step adjacent the second spacer layer.
16 . The semiconductor device of claim 15 , wherein a bottom surface of the first spacer layer is level with a bottom surface of the tunnel barrier layer.
17 . The semiconductor device of claim 15 , wherein the first spacer layer and the second spacer layer comprise different materials.
18 . The semiconductor device of claim 15 , further comprising a dielectric layer in contact with side surfaces of the second spacer layer and the reference layer.
19 . The semiconductor device of claim 18 , wherein the dielectric layer is in contact with the bottom electrode.
20 . The semiconductor device of claim 15 , wherein the first spacer layer and the second spacer layer form a multi-layer spacer structure adjacent to the MTJ stack.