Pellicle for extreme ultraviolet lithography and method of manufacturing the same

1. A pellicle for extreme ultraviolet lithography, the pellicle comprising:

a pellicle layer having a first thickness;

a frame on an edge area of the pellicle layer, the frame supporting the pellicle layer; and

a boron implantation layer between the pellicle layer and the frame.

2. The pellicle of claim 1 , wherein the pellicle layer includes at least one of silicon nitride, graphene, silicon carbide, or boron carbide.

3. The pellicle of claim 1 , wherein the boron implantation layer comprises boron at a concentration of about 10 19 /cm 3 to about 10 20 /cm 3 .

4. The pellicle of claim 1 , wherein a thickness of the boron implantation layer is about 1 μm to about 5 μm.

5. The pellicle of claim 1 , wherein the boron implantation layer is spaced by a first distance inward from an outer periphery of the pellicle layer.

6. The pellicle of claim 1 , wherein the boron implantation layer has an annular shape.

7. The pellicle of claim 1 , wherein both the frame and the boron implantation layer comprise silicon.

8. A method of manufacturing a pellicle for extreme ultraviolet lithography, the method comprising:

forming a boron implantation layer by implanting boron to a first thickness on a first surface of a substrate;

forming a membrane layer on the first surface of the substrate;

exposing the boron implantation layer by etching the substrate from a second surface of the substrate, the second surface facing the first surface of the substrate; and

removing an exposed portion of the boron implantation layer.

9. The method of claim 8 , wherein the forming of the boron implantation layer comprises implanting boron at a concentration of about 10 19 /cm 3 to about 10 20 /cm 3 .

10. The method of claim 8 , wherein the forming of the boron implantation layer comprises forming a layer having a thickness of about 1 μm to about 5 μm.

11. The method of claim 8 , wherein the membrane layer comprises at least one of silicon nitride, graphene, silicon carbide, or boron carbide.

12. The method of claim 8 , wherein the forming of the membrane layer comprises forming a protective layer on the first surface of the substrate, the protective layer covering the membrane layer.

13. The method of claim 12 , wherein the forming of the boron implantation layer comprises:

forming a first photoresist pattern on an edge area of the first surface of the substrate; and

forming the boron implantation layer in a central area of the first surface of the substrate, the central area exposed to the first photoresist pattern.

14. The method of claim 13 , wherein the exposing of the boron implantation layer comprises:

turning the substrate upside down such that the protective layer faces downward;

forming a second photoresist pattern on the second surface of the substrate, the second photoresist pattern defining a pellicle layer area and a trench area surrounding the pellicle layer area;

forming a mask exposing the pellicle layer area and the trench area by removing the membrane layer exposed to the second photoresist pattern; and

etching the second surface of the substrate by using the mask to expose the boron implantation layer.

15. The method of claim 14 , wherein the exposing of the boron implantation layer further comprises:

etching the trench area of the second surface of the substrate, exposed to the mask, to form a trench; and

etching a portion of the membrane layer on the first surface of the substrate exposed to the trench.

16. The method of claim 15 , further comprising:

detaching a portion of the substrate outside the trench from a portion of the substrate inside the trench by using the trench.

17. The method of claim 15 , wherein the forming of the boron implantation layer comprises forming the boron implantation layer to be spaced by a first distance inward from the trench.

18. The method of claim 15 , wherein the exposing the boron implantation layer by etching the substrate includes,

etching the substrate by using a wet etching process.

19. The method of claim 18 , wherein the etching the substrate by using a wet etching process includes,

etching the substrate by using at least one of KOH or TMAH.

20. The method of claim 14 , wherein the etching the portion of the membrane layer on the first surface of the substrate exposed to the trench includes,

etching the portion of the membrane using a dry etching process.