Methods of manufacturing pellicle for EUV lithography masks
In a method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, a nanotube layer including a plurality of carbon nanotubes is formed, the nanotube layer is attached to a pellicle frame, and a solvent dipping treatment is performed to the nanotube layer by applying bubbles in a solvent to the nanotube layer.
1 . A method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, comprising:
forming a nanotube layer including a plurality of carbon nanotubes; and
performing a solvent dipping treatment on the nanotube layer by applying bubbles in a solvent on the nanotube layer,
wherein the bubbles are generated by pulsed laser or by injecting gas or a mixture of gas and liquid into the solvent.
2 . The method of claim 1 , wherein the solvent includes an organic solvent or a mixture of water and an organic solvent.
3 . The method of claim 2 , wherein the organic solvent includes at least one selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, amines, esters, ethers, ketones and alcohols.
4 . The method of claim 2 , wherein the organic solvent includes at least one selected from the group consisting of methanol, ethanol and isopropanol.
5 . The method of claim 2 , wherein the organic solvent includes at least one selected from the group consisting of benzene, acetone and toluene.
6 . The method of claim 1 , wherein the solvent dipping treatment is performed for one minute to 2 hours.
7 . The method of claim 1 , wherein the nanotube layer is formed by chemical vapor deposition.
8 . The method of claim 1 , wherein an innermost carbon nanotube has a diameter of 0.5 nm to 20 nm.
9 . A method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, comprising:
forming a nanotube layer including a plurality of carbon nanotubes;
performing a solvent dipping treatment on the nanotube layer by applying bubbles in a solvent on the nanotube layer; and
drying the nanotube layer by placing the nanotube layer on a hot plate and heating the nanotube layer at a temperature in a range from 300° C. to 1000° C. in an inert gas ambient.
10 . The method of claim 9 , wherein the nanotube layer is inserted into the solvent at a speed of 1 mm per minute to 1000 mm per minute.
11 . The method of claim 10 , wherein the solvent dipping treatment is performed for one minute to 2 hours.
12 . The method of claim 11 , wherein the nanotube layer is removed from the solvent at a speed of 1 mm per minute to 1000 mm per minute.
13 . The method of claim 9 , wherein a size of the bubbles is in a range from 1 nm to 500 nm.
14 . The method of claim 9 , wherein a size of the bubbles is in a range from 1 μm to 10 μm.
15 . The method of claim 9 , wherein the nanotube layer is formed by chemical vapor deposition.
16 . The method of claim 9 , wherein an innermost carbon nanotube has a diameter of 0.5 nm to 20 nm.
17 . A method of manufacturing a pellicle for an extreme ultraviolet (EUV) photomask, comprising:
forming a nanotube layer including a plurality of single carbon nanotubes;
performing a solvent dipping treatment on the nanotube layer by applying bubbles in a solvent on the nanotube layer, thereby forming a plurality of bundles of the carbon nanotubes; and
drying the nanotube layer by placing the nanotube layer on a hot plate and heating the nanotube layer at a temperature in a range from 300° C. to 1000° C. in an inert gas ambient,
wherein an average number of carbon nanotubes in each bundle of carbon nanotubes in the plurality of bundles of carbon nanotubes is 3 to 30 after the solvent dipping treatment.
18 . The method of claim 17 , wherein a peak diameter in a size distribution of the plurality of bundles of carbon nanotubes is 10 nm to 50 nm after the solvent dipping treatment.
19 . The method of claim 17 , wherein the nanotube layer is formed by chemical vapor deposition.
20 . The method of claim 17 , wherein an innermost carbon nanotube has a diameter of 0.5 nm to 20 nm.