Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof
A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.
1. A gold-coated silver bonding wire comprising:
a core material containing silver as a main component; and
a coating layer provided on a surface of the core material and containing gold as a main component,
wherein the gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.
2. A gold-coated silver bonding wire comprising:
a core material containing silver as a main component; and
a coating layer provided on a surface of the core material and containing gold as a main component,
wherein the gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass % with respect to a total content of the bonding wire, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm with respect to a total content of the bonding wire, and
wherein, when a free air ball is formed at one end of the gold-coated silver bonding wire, the free air ball has, in a cross-sectional view of the bonding wire and the free air ball, on a vertical line stretching from a midpoint of a line connecting neck portions between the wire and the ball to a position corresponding to a lowest point of the ball, a gold concentration region in a section corresponding to a position of 60% or more from the midpoint of the line connecting the neck portions.
3. The bonding wire according to claim 2 ,
wherein a gold concentration in the gold concentration region is 8 mass % or more with respect to a total content of the silver and the gold.
4. A manufacturing method of the gold-coated silver bonding wire comprising a core material containing silver as a main component, and a coating layer provided on a surface of the core material and containing gold as a main component,
wherein the gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.
5. A semiconductor device comprising:
one semiconductor chip having at least one electrode or a plurality of semiconductor chips each having at least one electrode; and
a lead frame or a board having at least one electrode,
wherein a gold-coated silver bonding wire is connected at least one selected from between the electrode of the semiconductor chip and the lead frame, between the electrode of the semiconductor chip and the electrode of the board, and between the electrodes of the plurality of semiconductor chips, and
wherein the gold-coated silver bonding wire comprises:
a core material containing silver as a main component; and
a coating layer provided on a surface of the core material and containing gold as a main component, wherein
the gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.
6. A manufacturing method of the semiconductor device comprising one semiconductor chip having at least one electrode or a plurality of semiconductor chips each having at least one electrode, and a lead frame or a board having at least one electrode,
wherein a gold-coated silver bonding wire is connected at least one selected from between the electrode of the semiconductor chip and the lead frame, between the electrode of the semiconductor chip and the electrode of the board, and between the electrodes of the plurality of semiconductor chips, and
wherein the gold-coated silver bonding wire comprises:
a core material containing silver as a main component; and
a coating layer provided on a surface of the core material and containing gold as a main component, wherein
the gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.