IP Library › Granted Patent US 11,296,022
Granted Patent B2
US 11,296,022 · App. 17/002,615 · Granted Apr 5, 2022

Package and substrate comprising interconnects with semi-circular planar shape and/or trapezoid planar shape

Inventors: Aniket Patil (San Diego, CA); Joan Rey Villarba Buot (Escondido, CA); Hong Bok We (San Diego, CA)
Assignee: QUALCOMM Incorporated
H01L23/5226H01L21/486H01L21/76802H01L23/528
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Quick Facts
Patent No.
US 11,296,022
App. No.
17/002,615
Granted
Apr 5, 2022
Kind
B2
Abstract

A substrate that includes at least one dielectric layer, a plurality of first interconnects located in the at least one dielectric layer, at least one photo-imageable dielectric layer coupled to the at least one dielectric layer, and a plurality of second interconnects located in the at least one photo-imageable dielectric layer. The plurality of second interconnects includes at least one pair of adjacent interconnects having a centroid to centroid distance that is less than a pitch between the pair of interconnects. The pair of adjacent interconnects may include a pair of adjacent via interconnects and/or a pair of pad interconnects. The substrate may include a coreless substrate or a cored substrate.

Claims (61)

1. A substrate comprising:

at least one dielectric layer;

a plurality of first interconnects located in the at least one dielectric layer;

at least one photo-imageable dielectric layer coupled to the at least one dielectric layer; and

a plurality of second interconnects located in the at least one photo-imageable dielectric layer, the plurality of second interconnects comprising at least one pair of adjacent via interconnects having a centroid to centroid distance that is less than a pitch between the pair of adjacent via interconnects.

2. The substrate of claim 1 , wherein a centroid of a via interconnect from the at least one pair of adjacent via interconnects is a position of a center of mass of the via interconnect.

3. The substrate of claim 1 , wherein a centroid of a via interconnect from the at least one pair of adjacent via interconnects is a point or line that represents a mean position of the via interconnect.

4. The substrate of claim 1 , wherein the pitch between the pair of adjacent via interconnects is a center to center distance between the pair of adjacent via interconnects.

5. The substrate of claim 1 , wherein the pair of adjacent via interconnects includes a via interconnect having a semi-circular planar shape and/or a trapezoid planar shape.

6. The substrate of claim 1 ,

wherein the plurality of second interconnects further comprises at least one pair of adjacent pad interconnects having a centroid to centroid distance that is less than a pitch between the pair of adjacent pad interconnects, and

wherein the pair of adjacent pad interconnects is coupled to the pair of adjacent via interconnects.

7. The substrate of claim 1 , wherein the pair of adjacent via interconnects comprises:

a first via interconnect configured to provide a path for a first electrical current; and

a second via interconnect configured to provide a path for a second electrical current.

8. The substrate of claim 7 ,

wherein the first via interconnect is part of a first netlist circuit, and

wherein the second via interconnect is part of a second netlist circuit.

9. The substrate of claim 1 , wherein the pair of adjacent via interconnects comprises:

a first via interconnect configured to provide a path for a first electrical signal; and

a second via interconnect configured to provide a path for ground.

10. The substrate of claim 1 , wherein the pair of adjacent via interconnects comprises:

a first via interconnect configured to provide a path for a power; and

a second via interconnect configured to provide a path for ground.

11. The substrate of claim 1 , wherein the pair of adjacent via interconnects comprises:

a first via interconnect; and

a second via interconnect configured to provide a second electrical current, wherein the second electrical current is configured to induce a first electrical current through the first via interconnect.

12. The substrate of claim 1 , wherein the substrate includes a coreless substrate or a cored substrate that includes a core layer.

13. A substrate comprising:

at least one dielectric layer;

a plurality of first interconnects located in the at least one dielectric layer;

at least one photo-imageable dielectric layer coupled to the at least one dielectric layer; and

a plurality of second interconnects located in the at least one photo-imageable dielectric layer, wherein the plurality of second interconnects comprises at least one via interconnect having a semi-circular planar shape.

14. The substrate of claim 13 , wherein the plurality of second interconnects comprises:

a first via interconnect having a first semi-circular planar shape; and

a second via interconnect directly adjacent to the first via interconnect, wherein the second via interconnect has a second semi-circular planar shape.

15. The substrate of claim 14 , wherein the first semi-circular planar shape is a mirror image of the second semi-circular planar shape.

16. The substrate of claim 13 , wherein the plurality of second interconnects comprises at least one via interconnect having a trapezoid planar shape.

17. An apparatus comprising:

an integrated device;

a substrate coupled to the integrated device, the substrate comprising:

at least one dielectric layer;

a plurality of first interconnects located in the at least one dielectric layer;

at least one photo-imageable dielectric layer coupled to the at least one dielectric layer; and

a plurality of second interconnects located in the at least one photo-imageable dielectric layer, the plurality of second interconnects comprising at least one pair of adjacent via interconnects having a centroid to centroid distance that is less than a pitch between the pair of adjacent via interconnects.

18. The apparatus of claim 17 , wherein a centroid of a via interconnect from the at least one pair of adjacent via interconnect is a position of a center of mass of the via interconnect.

19. The apparatus of claim 17 , wherein a centroid of a via interconnect from the at least one pair of adjacent via interconnects is a point or line that represents a mean position of the via interconnect.

20. The apparatus of claim 17 , wherein the pitch between the pair of adjacent via interconnects is a center to center distance between the pair of adjacent via interconnects.

21. The apparatus of claim 17 , wherein the pair of adjacent via interconnects includes a via interconnect having a semi-circular planar shape and/or a trapezoid planar shape.

22. The apparatus of claim 17 , wherein the apparatus includes a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an internet of things (IoT) device, and/or a device in an automotive vehicle.

23. A method for fabricating a substrate, comprising:

forming at least one dielectric layer;

forming a plurality of first interconnects in the at least one dielectric layer;

forming at least one photo-imageable dielectric layer over the at least one dielectric layer; and

forming a plurality of second interconnects in the at least one photo-imageable dielectric layer, wherein forming the plurality of second interconnects comprises forming at least one pair of adjacent interconnects having a centroid to centroid distance that is less than a pitch between the pair of adjacent interconnects.

24. The method of claim 23 , wherein a centroid of an interconnect from the at least one pair of adjacent interconnects is a position of a center of mass of the interconnect.

25. The method of claim 23 , wherein a centroid of an interconnect from the at least one pair of adjacent interconnects is a point or line that represents a mean position of the interconnect.

26. The method of claim 23 , wherein the pitch between the pair of adjacent interconnects is a center to center distance between the pair of adjacent interconnects.

27. The method of claim 23 , wherein forming the plurality of second interconnects comprises forming at least one via interconnect having a semi-circular planar shape and/or a trapezoid planar shape.

28. The method of claim 23 , wherein forming the plurality of second interconnects comprises forming at least one via interconnect having a non-full circular planar shape and a non-rectangular planar shape.

29. The method of claim 23 , wherein the pair of adjacent interconnects includes a pair of adjacent via interconnects and/or a pair of adjacent pad interconnects.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT INVENTOR 1 AS ANIKET PATIL PREVIOUSLY RECORDED AT REEL: 053612 FRAME: 0312. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 23, 2022
From: PATIL, ANIKET; BUOT, JOAN REY VILLARBA; WE, HONG BOK
To: QUALCOMM INCORPORATED
Reel/Frame 059220/0230 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2020
From: PATIL, PATIL; BUOT, JOAN REY VILLARBA; WE, HONG BOK
To: QUALCOMM INCORPORATED
Reel/Frame 053612/0312 →
Continuity (1)
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