3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing
Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a pillar including a length, a memory cell string and control lines located along a first segment of the pillar, and select lines located along a second segment of the pillar. The control lines include at least a first control line and a second control line. The first control line is adjacent the second control line. The first control line is separated from the second control line by a first distance in a direction of the length of the pillar. The select lines include at least a first select line and a second select line. The first select line is separated from the second select line by a second distance in the direction of the length of the pillar. The second distance is less than the first distance.
1. An apparatus comprising:
a data line;
a pillar including a first segment and a second segment;
a memory cell string and control lines located adjacent the first segment of the pillar;
a first dielectric material between a first control line of the control lines and a second control line of the control lines;
select lines located adjacent the second segment of the pillar, the select lines located between the data line and the memory cell string; and
a second dielectric material between a first select line of the select lines and a second select line of the select lines, wherein a combination of a thickness of the first select line, a thickness of the second select line, and a thickness of the second dielectric material is less than a combination of a thickness of the first control line, a thickness of the second control line, and a thickness of the first dielectric material.
2. The apparatus of claim 1 , wherein the thickness of the second dielectric material is less than the thickness of the first dielectric material.
3. The apparatus of claim 1 , wherein the thickness of the first select line is a same as the thickness of the first control line.
4. The apparatus of claim 1 , wherein the select lines and the control lines have a same material.
5. The apparatus of claim 1 , wherein the select lines and the control lines include metal.
6. The apparatus of claim 1 , wherein the select lines are coupled to each other.
7. The apparatus of claim 6 , further comprising an additional select line different from the select lines, the additional select line located along a segment of the pillar between the select lines and the memory cell string and electrically separated from the select lines.
8. An apparatus comprising:
a source;
a pillar including a first segment and a second segment;
a memory cell string and control lines located adjacent the first segment of the pillar;
a first dielectric material between a first control line of the control lines and a second control line of the control lines;
select lines located adjacent the second segment of the pillar, the select lines located between the source and the memory cell string; and
a second dielectric material between a first select line of the select lines and a second select line of the select lines, wherein a combination of a thickness of the first select line, a thickness of the second select line, and a thickness of the second dielectric material is less than a combination of a thickness of the first control line, a thickness of the second control line, and a thickness of the first dielectric material.
9. The apparatus of claim 8 , wherein the thickness of the second dielectric material is less than the thickness of the first dielectric material.
10. The apparatus of claim 8 , wherein the thickness of the first select line is a same as the thickness of the first control line.
11. The apparatus of claim 8 , wherein the select lines and the control lines have a same material.
12. The apparatus of claim 8 , wherein the select lines and the control lines include metal.
13. The apparatus of claim 8 , wherein the select lines are coupled to each other.
14. The apparatus of claim 13 , further comprising an additional select line different from the select lines, the additional select line located along a segment of the pillar between the select lines and the memory cell string and electrically separated from the select lines.
15. An apparatus comprising:
a data line;
a source;
a pillar including a first segment, a second segment, and a third segment, the first segment located between the second and third segment;
a memory cell string and control lines located adjacent the first segment of the pillar;
a first dielectric material between a first control line of the control lines and a second control line of the control lines;
first select lines located adjacent the second segment of the pillar, the first select lines located between the data line and the memory cell string; and
a second dielectric material between a first select line of the first select lines and a second select line of the first select lines, wherein a combination of a thickness of the first select line, a thickness of the second select line, and a thickness of the second dielectric material is less than a combination of a thickness of the first control line, a thickness of the second control line, and a thickness of the first dielectric material;
second select lines located adjacent the third segment of the pillar, the second select lines located between the source and the memory cell string; and
a third dielectric material between a first select line of the second select lines and a second select line of the second select lines, wherein a combination of a thickness of the first select line of the second select lines, a thickness of the second select line of the second select lines, and a thickness of the third dielectric material is less than a combination of the thickness of the first control line, the thickness of the second control line, and the thickness of the first dielectric material.
16. The apparatus of claim 15 , wherein the thickness of the second dielectric material is less than the thickness of the first dielectric material.
17. The apparatus of claim 15 , wherein the thickness of the third dielectric material is less than the thickness of the first dielectric material.
18. The apparatus of claim 15 , wherein the thickness of the first select line of the first select lines is a same as the thickness of the first control line.
19. The apparatus of claim 15 , wherein the thickness of the first select line of the second select lines is a same as the thickness of the first control line.
20. The apparatus of claim 15 , wherein the first select lines, the second select lines, and the control lines have a same material.