Extreme ultraviolet mask and method for forming the same

1. A photolithography mask, comprising:

a substrate;

a reflective multilayer structure over the substrate;

an adhesion layer over the reflective multilayer structure;

a capping layer over the adhesion layer, the capping layer comprising a non-crystalline conductive material; and

a patterned absorber layer over the capping layer.

2. The photolithography mask of claim 1 , wherein the adhesion layer comprises silicon dioxide, silicon nitride, or silicon oxynitride.

3. The photolithography mask of claim 1 , wherein the capping layer comprises amorphous ruthenium (Ru).

4. The photolithography mask of claim 1 , wherein the capping layer comprises semi-crystalline Ru.

5. The photolithography mask of claim 1 , wherein the capping layer further comprises one or more dopants having a carbon solubility lower than that of the non-crystalline material of the capping layer.

6. The photolithography mask of claim 5 , wherein the one or more dopants are selected from the group consisting of niobium (Nb), titanium (Ti), zirconium (Zr), yttrium (Y), boron (B), and phosphorus (P).

7. The photolithography mask of claim 5 , wherein a concentration of the one or more dopants in the capping layer is less than 50 atomic %.

8. The photolithography mask of claim 1 , wherein the adhesion layer has a thickness from about 1 nm to about 3 nm.

9. The photolithography mask of claim 1 , further comprising a patterned anti-reflection layer over the patterned absorber layer.

10. A photolithography mask, comprising:

a substrate;

a reflective multilayer structure over the substrate;

an adhesion layer over the reflective multilayer structure, the adhesion layer comprising a dielectric material;

a capping layer over the adhesion layer, the capping layer comprising an amorphous conductive material; and

a patterned absorber layer over the capping layer.

11. The photolithography mask of claim 10 , wherein the adhesion layer comprises silicon dioxide, silicon nitride, or silicon oxynitride.

12. The photolithography mask of claim 10 , wherein the capping layer comprises amorphous ruthenium.

13. The photolithography mask of claim 10 , wherein the capping layer further comprises one or more dopants selected from the group consisting of niobium (Nb), titanium (Ti), zirconium (Zr), yttrium (Y), boron (B), and phosphorus (P).

14. The photolithography mask of claim 10 , wherein the reflective multilayer structure comprises alternating layers of molybdenum (Mo) and silicon (Si), wherein a Si layer is a topmost layer in the reflective multilayer structure.

15. The photolithography mask of claim 10 , wherein the patterned absorber layer comprises chromium (Cr), chromium oxide (CrO), titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta), titanium (Ti), Mo, aluminum-copper (Al—Cu), palladium (Pd), tantalum boron nitride (TaBN), aluminum oxide (Al 2 O 3 ), or silver oxide (Ag 2 O).

16. The photolithography mask of claim 10 , further comprising a patterned anti-reflection layer over the patterned absorber layer.

17. The photolithography mask of claim 16 , wherein the patterned anti-reflection layer comprises tantalum oxide (TaO) or tantalum boron oxide (TaBO).

18. A method of forming a photolithography mask, comprising:

depositing a reflective multilayer structure over a substrate;

forming an adhesion layer over the reflective multilayer structure;

depositing a capping layer over the adhesion layer, the capping layer comprising an amorphous conductive material;

depositing an absorber layer over the capping layer; and

etching the absorber layer to form a plurality of openings exposing a surface of the capping layer.

19. The method of claim 18 , further comprising etching the absorber layer, the capping layer, and the reflective multilayer structure to form a plurality of trenches in a peripheral region of the substrate surrounding the plurality of openings.

20. The method of claim 18 , further comprising doping the capping layer with one or more dopants.