Semiconductor device and method for manufacturing the same
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
1. A semiconductor device comprising:
a first stage;
a second stage, wherein the second stage comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor; and
a third stage,
wherein one of a source and a drain of the first transistor and one of a source and a drain of the second transistor are electrically connected to an output terminal,
wherein a gate of the first transistor, a gate of the third transistor, and one of a source and a drain of the eighth transistor are electrically connected to each other,
wherein a gate of the second transistor a gate of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, and one of a source and a drain of the seventh transistor are electrically connected to each other,
wherein one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor are electrically connected to each other,
wherein a gate of the fifth transistor is electrically connected to an output terminal of the third stage,
wherein a gate of the sixth transistor and a gate of the eighth transistor are electrically connected to an output terminal of the first stage.
2. The semiconductor device according to claim 1 , wherein one of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor comprises an oxide semiconductor layer comprising a channel formation region.
3. The semiconductor device according to claim 2 ,
wherein the oxide semiconductor layer comprises a first region and a second region over the first region, and
wherein a crystal structure of the first region is different from a crystal structure of the second region.
4. A semiconductor device comprising:
a first stage;
a second stage, wherein the second stage comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor; and
a third stage,
wherein one of a source and a drain of the first transistor and one of a source and a drain of the second transistor are electrically connected to a pixel portion,
wherein a gate of the first transistor, a gate of the third transistor, and one of a source and a drain of the eighth transistor are electrically connected to each other,
wherein a gate of the second transistor a gate of the fourth transistor, one of a source and a drain of the fifth transistor, one of a source and a drain of the sixth transistor, and one of a source and a drain of the seventh transistor are electrically connected to each other,
wherein one of a source and a drain of the third transistor and one of a source and a drain of the fourth transistor are electrically connected to an output terminal,
wherein a gate of the fifth transistor is electrically connected to an output terminal of the third stage,
wherein a gate of the sixth transistor and a gate of the eighth transistor are electrically connected to an output terminal of the first stage,
wherein the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are electrically connected to a first wiring,
wherein the other of the source and the drain of the second transistor and the other of the source and the drain of the fourth transistor are electrically connected to a second wiring,
wherein the other of the source and the drain of the fifth transistor and the other of the source and the drain of the seventh transistor are electrically connected to a third wiring.
5. The semiconductor device according to claim 4 , wherein the first wiring and the third wiring are different wirings.
6. The semiconductor device according to claim 4 , wherein one of the first transistor, the second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor comprises an oxide semiconductor layer comprising a channel formation region.
7. The semiconductor device according to claim 6 ,
wherein the oxide semiconductor layer comprises a first region and a second region over the first region, and
wherein a crystal structure of the first region is different from a crystal structure of the second region.