Processing apparatus for processing target object

1. A processing apparatus for a processing target object, comprising:

a chamber main body;

a mounting table which is provided within the chamber main body and configured to mount the processing target object thereon; and

a chiller unit configured to output a coolant into the mounting table,

wherein the mounting table comprises:

a cooling table in which the coolant outputted from the chiller unit is flown; and

an electrostatic chuck provided on the cooling table,

the cooling table comprises a first portion, a second portion, a first path, a second path and a third path,

the electrostatic chuck is provided on the first portion,

the first portion is provided on the second portion,

the first path comprises a first end portion and a second end portion, and is provided within the first portion,

the second path comprises a third end portion and a fourth end portion, and is provided within the second portion,

the third path is connected to the first end portion of the first path and the third end portion of the second path, and is extended between the first end portion and the third end portion,

the chiller unit is connected to the second end portion of the first path and the fourth end portion of the second path,

the first path is extended within the first portion along the electrostatic chuck,

the second path is extended within the second portion along the electrostatic chuck,

the coolant outputted from the chiller unit is inputted into the second end portion of the first path to pass through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit from the fourth end portion of the second path,

the cooling table further comprises the first heat transfer space extended along the electrostatic chuck between the first portion and the second portion,

the first heat transfer space is airtightly partitioned from the first, second and third paths by at least one elastic member, wherein the at least one elastic member separates the third path from the first heat transfer space, and

the processing apparatus further comprises a pressure control device connected to the first heat transfer space and configured to supply/suck a gas into/from the first heat transfer space to adjust an internal pressure of the first heat transfer space.

2. The processing apparatus of claim 1 ,

wherein the first path includes a region having an approximately regular cross sectional area.

3. The processing apparatus of claim 1 ,

wherein the third path is extended between an inside of the first portion and an inside of the second portion to be overlapped with a central portion of the electrostatic chuck, when viewed from above the electrostatic chuck,

the first path is extended from the first end portion to the second end portion in a spiral shape along the electrostatic chuck, when viewed from above the electrostatic chuck, and

the second path is extended from the third end portion to the fourth end portion in a spiral shape along the electrostatic chuck, when viewed from above the electrostatic chuck.

4. The processing apparatus of claim 1 ,

wherein the first heat transfer space is airtightly divided into multiple first regions by a plurality of elastic members, and

the pressure control device is connected to each of the multiple first regions and is configured to adjust individually each of internal pressures of the multiple first regions.

5. The processing apparatus of claim 1 , further comprising:

a second heat transfer space,

wherein the second heat transfer space is provided between the electrostatic chuck and the cooling table, and extended along the electrostatic chuck, and

the pressure control device is connected to the second heat transfer space, and is configured to adjust an internal pressure of the second heat transfer space.

6. The processing apparatus of claim 5 ,

wherein the second heat transfer space is airtightly divided into multiple second regions, and

the pressure control device is connected to each of the multiple second regions and is configured to adjust individually each internal pressures of the multiple second regions.