Device and method for bonding of substrates
A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T H ; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T H is reduced at the second sample holder surface during the bonding.
1. A method for bonding a first substrate with a second substrate at respective contact faces of the substrates, the method comprising:
holding the first substrate to a first sample holder surface of a first sample holder with a holding force F H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F H2 ,
contacting the respective contact faces of the substrates at a bond initiation point;
bonding the first substrate with the second substrate along a bonding wave running from the bond initiation point to respective side edges of the substrates; and
switching-on and switching-off fixing means of the second sample holder at least once, the switching-on and switching-off being location-resolved and/or time-resolved.
2. The method according to claim 1 , wherein the contacting is performed using a nozzle.
3. The method according to claim 2 , wherein the contacting comprises applying a force in a range of 100 mN to 5000 mN using the nozzle.
4. The method according to claim 1 , wherein a distance between the first substrate and the second substrate before the bonding is less than 100 μm.
5. The method according to claim 1 , wherein the holding force F H1 is reduced during the bonding at a time t 1 to an extent such that the first substrate is released from the first sample holder.
6. The method according to claim 1 , wherein the holding force F H2 is reduced during the bonding at a time t 2 , to an extent such that the second substrate on the second sample holder is able to be deformed along the contact face of the second substrate.
7. The method according to claim 1 , wherein the second substrate is ventilated from the second sample holder surface at a time t 3 with an overpressure.
8. The method according to claim 1 , wherein the holding force F H2 is increased at a time t 4 after the bonding.
9. The method according to claim 7 , wherein the overpressure is in a range of 10 mbar to 500 mbar.